BSM50GP120 Infineon Technologies, BSM50GP120 Datasheet - Page 7
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BSM50GP120
Manufacturer Part Number
BSM50GP120
Description
IGBT Modules 1200V 50A PIM
Manufacturer
Infineon Technologies
Datasheet
1.BSM50GP120.pdf
(12 pages)
Specifications of BSM50GP120
Configuration
Hex
Collector- Emitter Voltage Vceo Max
1200 V
Collector-emitter Saturation Voltage
2.5 V
Continuous Collector Current At 25 C
80 A
Gate-emitter Leakage Current
300 nA
Power Dissipation
360 W
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
EconoPIM3
Channel Type
N
Collector-emitter Voltage
1.2kV
Collector Current (dc) (max)
80A
Gate To Emitter Voltage (max)
±20V
Pin Count
24
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BSM50GP120
Manufacturer:
NICHICON
Quantity:
30 000
Company:
Part Number:
BSM50GP120
Manufacturer:
Infineon Technologies
Quantity:
135
Company:
Part Number:
BSM50GP120
Manufacturer:
EUPEC
Quantity:
25
Part Number:
BSM50GP120
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
BSM50GP120
Quantity:
50
IGBT-Module
IGBT-Modules
Technische Information / Technical Information
10
9
8
7
6
5
4
3
2
1
0
18
16
14
12
10
8
6
4
2
0
0
Schaltverluste Wechselr. (typisch)
Switching losses Inverter (typical)
Schaltverluste Wechselr. (typisch)
Switching losses Inverter (typical)
0
5
20
Eon
Eoff
Erec
Eon
Eoff
Erec
10
BSM50GP120
40
R
I
C
15
G
[A]
7(11)
[W]
T
E
T
on
j
E
= 125°C,
j
on
= 125°C, V
= f (I
60
= f (R
C
), E
20
G
), E
GE
off
V
= +-15 V ,
off
= f (I
GE
= ±15 V,
= f (R
80
C
), E
25
G
), E
rec
I
c
= I
= f (I
rec
nenn
R
Gon
= f (R
C
,
100
)
= R
V
V
30
CC
CC
G
Goff
)
=
=
=
600 V
15 Ohm
600 V
120
35
DB-PIM-10.xls