FDFME2P823ZT Fairchild Semiconductor, FDFME2P823ZT Datasheet
FDFME2P823ZT
Specifications of FDFME2P823ZT
Related parts for FDFME2P823ZT
FDFME2P823ZT Summary of contents
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... Thermal Resistance, Junction to Ambient (Single Operation) θJA Package Marking and Ordering Information Device Marking Device 3T FDFME2P823ZT ©2010 Fairchild Semiconductor Corporation FDFME2P823ZT Rev.C1 ® MOSFET and Schottky Diode General Description This device is designed specifically as a single package solution = -2 for the battery charge switch in cellular handset and other = -1 ...
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... Source to Drain Diode Forward Voltage SD t Reverse Recovery Time rr Q Reverse Recovery Charge rr Schottky Diode Characteristics I Reverse Leakage R V Forward Voltage F V Forward Voltage F ©2010 Fairchild Semiconductor Corporation FDFME2P823ZT Rev. °C unless otherwise noted J Test Conditions = -250 μ -250 μA, referenced to 25 ° - ± ...
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... Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied. 4. Rating is applicable to MOSFET only. ©2010 Fairchild Semiconductor Corporation FDFME2P823ZT Rev.C1 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material pad copper, 1.5 " ...
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... PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 0.0 0.5 1 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2010 Fairchild Semiconductor Corporation FDFME2P823ZT Rev. 25°C unless otherwise noted J μ s 1.5 2.0 500 400 300 200 100 50 75 100 125 150 0 0. -55 ...
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... 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 9. Forward Bias Safe Operating Area - 125 100 REVERSE VOLTAGE (V) R Figure 11. Schottky Diode Reverse Current ©2010 Fairchild Semiconductor Corporation FDFME2P823ZT Rev. 25°C unless otherwise noted J 1000 100 100 100 0. 0.001 Figure 12. Schottky Diode Forward Voltage ...
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... Figure 13. Single Pulse Maximum Power Dissipation 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE R 0.001 - Figure 14. Junction-to-Ambient Transient Thermal Response Curve ©2010 Fairchild Semiconductor Corporation FDFME2P823ZT Rev. 25°C unless otherwise noted PULSE WIDTH ( 195 C/W θ RECTANGULAR PULSE DURATION (s) 6 ...
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... Dimensional Outline and Pad Layout ©2010 Fairchild Semiconductor Corporation FDFME2P823ZT Rev.C1 7 www.fairchildsemi.com ...
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... Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2010 Fairchild Semiconductor Corporation FDFME2P823ZT Rev.C1 F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource PowerXS™ Green FPS™ Programmable Active Droop™ ...