FDFME2P823ZT Fairchild Semiconductor, FDFME2P823ZT Datasheet - Page 3

• Manufacturer Part Number: FDFME2P823ZT
• Description: Various MOSFETs -20V Integrated P-Ch PwrTrnch w/Sch Diode
• Manufacturer: Fairchild Semiconductor

Specifications of FDFME2P823ZT

• Forward Transconductance Gfs (max / Min): 7 S
• Gate Charge Qg: 5.5 nC
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: P-Channel
• Package / Case: MicroFET 1.6 x 1.6 Thin
• Resistance Drain-source Rds (on): 95 mOhms
• Drain-source Breakdown Voltage: - 20 V
• Continuous Drain Current: - 2.3 A
• Power Dissipation: 1.3 W
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2010 Fairchild Semiconductor Corporation
FDFME2P823ZT Rev.C1
Electrical Characteristics
Notes:
1. R
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied.
4. Rating is applicable to MOSFET only.
user's board design.
θJA
(a) MOSFET R
(b) MOSFET R
(c) Schottky R
(d) Schottky R
is determined with the device mounted on a 1 in
θJA
θJA
θJA
θJA
= 110 °C/W when mounted on a 1 in
= 234 °C/W when mounted on a minimum pad of 2 oz copper.
= 90 °C/W when mounted on a 1 in
= 195 °C/W when mounted on a minimum pad of 2 oz copper.
a. 90 °C/W when mounted on
c. 110 °C/W when mounted on
a 1 in
a 1 in
2
2
pad of 2 oz copper.
pad of 2 oz copper.
2
oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
2
2
pad of 2 oz copper, 1.5 " x 1.5 " x 0.062 " thick PCB.
pad of 2 oz copper, 1.5 " x 1.5 " x 0.062" thick PCB.
3
θJC
is guaranteed by design while R
b. 195 °C/W when mounted on a
d. 234 °C/W when mounted on a
minimum pad of 2 oz copper.
minimum pad of 2 oz copper.
θJA
is determined by the
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