BSP123 L6327 Infineon Technologies, BSP123 L6327 Datasheet
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BSP123 L6327
Manufacturer Part Number
BSP123 L6327
Description
MOSFET Small Signal N-CH 100 V 0.37 A
Manufacturer
Infineon Technologies
Specifications of BSP123 L6327
Minimum Operating Temperature
- 55 C
Configuration
Single Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
6 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.37 A
Power Dissipation
1790 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-223
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BSP123L6327XT
•
• Qualified according to AEC Q101
Feature
SIPMOS
Type
BSP123
BSP123
Maximum Ratings, at T
Parameter
Continuous drain current
T
T
Pulsed drain current
T
Reverse diode dv/dt
I
Gate source voltage
ESD Class JESD22-A114-HBM
Power dissipation
T
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
S
A
A
A
A
N-Channel
Enhancement mode
Logic Level
dv/dt rated
Pb-free lead plating; RoHS compliant
=0.37A, V
=25°C
=70°C
=25°C
=25°C
DS
=80V, di/dt=200A/µs, T
Small-Signal-Transistor
Package
PG-SOT223
PG-SOT223
j
= 25 °C, unless otherwise specified
Tape and Reel Information
L6433: 4000 pcs/reel
L6327: 1000 pcs/reel
jmax
=150°C
Page 1
Rev. 1.5
Symbol
I
I
dv/dt
V
P
T
D
D puls
j ,
GS
tot
T
stg
Marking
BSP123
BSP123
BSP123
-55... +150
55/150/56
0 (<250V)
Product Summary
V
R
I
Value
D
0.37
DS
1.48
1.79
DS(on)
±20
0.3
6
Packaging
Non dry
Non dry
PG-SOT223
2010-06-22
0.37
100
6
BSP123
Unit
A
kV/µs
V
W
°C
V
A