BSP123 L6327 Infineon Technologies, BSP123 L6327 Datasheet - Page 4

• Manufacturer Part Number: BSP123 L6327
• Description: MOSFET Small Signal N-CH 100 V 0.37 A
• Manufacturer: Infineon Technologies

Specifications of BSP123 L6327

• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.37 A
• Power Dissipation: 1790 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-223
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSP123L6327XT

1 Power dissipation
P
3 Safe operating area
I
parameter : D = 0 , T
D
tot
= f ( V
10
10
= f (T
10
10
W
1.9
1.6
1.4
1.2
0.8
0.6
0.4
0.2
A
-1
-2
1
0
1
0
10
0
BSP123
BSP123
0
DS
A
20
)
)
40
10
60
1
A
= 25 °C
80
DC
100
t p = 21.0ms
10
2
120
°C
V
T
V
A
DS
160
10
Page 4
Rev. 1.5
3
2 Drain current
I
parameter: V
4 Transient thermal impedance
Z
parameter : D = t
D
thJA
= f (T
K/W
0.32
0.28
0.24
0.16
0.12
0.08
0.04
10
10
10
10
10
10
10
0.4
0.2
A
= f (t
-1
-2
-3
0
3
2
1
0
10
0
BSP123
BSP123
A
-5
)
p
20
10
)
single pulse
-4
GS
40
10
p
-3
10 V
/T
60
10
-2
80
10
-1
100
10
0
120
2010-06-2
10
D = 0.50
1
BSP123
°C
0.20
0.10
0.05
0.02
0.01
T
t
p
s
A
160
10
3