BSP123 L6327 Infineon Technologies, BSP123 L6327 Datasheet - Page 5

• Manufacturer Part Number: BSP123 L6327
• Description: MOSFET Small Signal N-CH 100 V 0.37 A
• Manufacturer: Infineon Technologies

Specifications of BSP123 L6327

• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.37 A
• Power Dissipation: 1790 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-223
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSP123L6327XT

5 Typ. output characteristic
I
parameter: T
7 Typ. transfer characteristics
I
parameter: T
D
D
= f ( V
= f (V
0.55
0.45
0.35
0.25
0.15
0.05
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.7
0.5
0.4
0.3
0.2
0.1
A
A
0
0
0
0
10V
5V
4.5V
4.1V
3.9V
3.7V
3.5V
3.1V
2.9V
2.3V
DS
GS
0.5
0.5
)
); V
j
j
1
1
= 25 °C, V
= 25 °C
DS
1.5
1.5
2 x I
2
2
2.5
2.5
D
GS
x R
3
3
DS(on)max
3.5
3.5
4
4
V
V
V
V
DS
GS
5
5
Page 5
Rev. 1.5
6 Typ. drain-source on resistance
R
parameter: T
8 Typ. forward transconductance
g
parameter: T
fs
DS(on)
= f(I
0.25
0.15
0.05
0.4
0.3
0.2
0.1
S
20
16
14
12
10
8
6
4
2
0
0
0
0
D
= f (I
)
0.1
0.1
D
j
j
= 25 °C, V
= 25 °C
)
0.2
0.2
0.3
0.3
GS
0.4
0.4
0.5
0.5
2010-06-22
BSP123
A
A
I
I
D
D
2.3V
2.9V
3.1V
3.5V
3.7V
3.9V
4.1V
4.5V
5.0V
10V
0.7
0.7