1ED020I12-F Infineon Technologies, 1ED020I12-F Datasheet - Page 20

• Manufacturer Part Number: 1ED020I12-F
• Description: MOSFET & Power Driver ICs SNGL IGBT Driver IC IGBT Driver IC
• Manufacturer: Infineon Technologies

Specifications of 1ED020I12-F

• Product: Driver ICs - Various
• Rise Time: 400 ns
• Fall Time: 600 ns
• Supply Voltage (max): 5.5 V, 20 V, 0 V
• Supply Voltage (min): 4.5 V, 13 V, - 12 V
• Maximum Power Dissipation: 700 mW
• Maximum Operating Temperature: + 105 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Number Of Drivers: 1
• Number Of Outputs: 1
• Package / Case: PG-DSO-16-15
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

8
8.1
The PCB layout shown in figure 12 represents the reference layout used for the thermal characterisation. Pins 9 and 16
(GND1) and pins 1 and 8 (VEE2) require ground plane connections for achiving maximum power dissipation. The
1ED020I12-F is conceived to dissipate most of the heat generated through this pins.
8.2
Following factors should be taken into account for an optimum PCB layout.
- Sufficient spacing should be kept between high voltage isolated side and low voltage side circuits.
- The same minimum distance between two adjacent high-side isolated parts of the PCB should be maintained to increase the
effective isolation and reduce parasitic coupling.
- In order to ensure low supply ripple and clean switching signals, bypass capacitor trace lengths should be kept as short as
possible.
Datasheet
Total Area = 374.4 mm
Output Side
Application Notes
Reference Layout for Thermal Data
Printed Circuit Board Guidelines
Figure 10: Reference layout for thermal data (Copper thickness 105 m)
2
20
PCB + Bottom-Layer
Input Side
PCB + Top-Layer
Version 2.2, 2009-12-03
EICEDRIVER
Application Notes
1ED020I12-F
TM