FDD86250 Fairchild Semiconductor, FDD86250 Datasheet - Page 3
![MOSFET N-CH 150V 8A DPAK](/photos/16/7/160789/d2pak-3_sml.jpg)
FDD86250
Manufacturer Part Number
FDD86250
Description
MOSFET N-CH 150V 8A DPAK
Manufacturer
Fairchild Semiconductor
Datasheet
1.FDD86250.pdf
(6 pages)
Specifications of FDD86250
Input Capacitance (ciss) @ Vds
2110pF @ 75V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
22 mOhm @ 8A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
33nC @ 10V
Power - Max
3.1W
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
31 mOhms
Forward Transconductance Gfs (max / Min)
28 S
Drain-source Breakdown Voltage
150 V
Continuous Drain Current
50 A
Power Dissipation
132 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDD86250
Manufacturer:
FSC
Quantity:
20 000
©2010 Fairchild Semiconductor Corporation
FDD86250 Rev.C
Typical Characteristics
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
40
30
20
10
40
30
20
10
Figure 3. Normalized On- Resistance
0
0
Figure 1.
-75
2
0
Figure 5. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
DS
I
V
D
-50
GS
vs Junction Temperature
= 8 A
= 5 V
= 10 V
V
V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
1
T
V
-25
DS
GS
On-Region Characteristics
J
V
GS
,
3
GS
V
, GATE TO SOURCE VOLTAGE (V)
,
JUNCTION TEMPERATURE (
GS
DRAIN TO SOURCE VOLTAGE (V)
= 5.5 V
= 6 V
= 10 V
0
T
J
2
= 150
25
μ
s
4
o
C
50
T
J
3
μ
= 25 °C unless otherwise noted
s
75
T
J
= -55
5
o
100 125 150
C )
T
V
4
J
GS
V
= 25
o
GS
C
= 4.5 V
= 5 V
o
C
6
5
3
0.001
0.01
80
60
40
20
0.1
4
3
2
1
0
40
10
Figure 2.
Figure 4.
0
1
0.0
Forward Voltage vs Source Current
0
4
vs Drain Current and Gate Voltage
Figure 6.
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
GS
V
= 0 V
SD
0.2
T
, BODY DIODE FORWARD VOLTAGE (V)
Normalized On-Resistance
J
V
On-Resistance vs Gate to
V
= 150
GS
GS
10
I
Source Voltage
D
Source to Drain Diode
,
,
= 4.5 V
GATE TO SOURCE VOLTAGE (V)
DRAIN CURRENT (A)
I
0.4
D
o
6
C
= 8 A
T
T
J
J
μ
= 125
= 25
0.6
s
20
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
o
o
V
C
C
GS
T
0.8
= 6 V
J
8
= -55
T
V
J
GS
30
= 25
= 5 V
www.fairchildsemi.com
o
V
V
C
1.0
GS
GS
o
C
= 5.5 V
= 10 V
μ
s
1.2
40
10