FDD86250 Fairchild Semiconductor, FDD86250 Datasheet - Page 4

• Manufacturer Part Number: FDD86250
• Description: MOSFET N-CH 150V 8A DPAK
• Manufacturer: Fairchild Semiconductor

Specifications of FDD86250

• Input Capacitance (ciss) @ Vds: 2110pF @ 75V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 22 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 33nC @ 10V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 31 mOhms
• Forward Transconductance Gfs (max / Min): 28 S
• Drain-source Breakdown Voltage: 150 V
• Continuous Drain Current: 50 A
• Power Dissipation: 132 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2010 Fairchild Semiconductor Corporation
FDD86250 Rev.C
Typical Characteristics
100
10
0.1
10
50
10
0.001
8
6
4
2
0
Figure 7.
1
1
0.1
0
I
D
Figure 9.
SINGLE PULSE
T
R
T
Figure 11.
= 8 A
J
C
θ
JC
= MAX RATED
THIS AREA IS
LIMITED BY r
= 25
= 0.94
V
Switching Capability
0.01
5
o
DS
Gate Charge Characteristics
C
t
AV
, DRAIN to SOURCE VOLTAGE (V)
Operating Area
Unclamped Inductive
1
, TIME IN AVALANCHE (ms)
o
Q
C/W
g
, GATE CHARGE (nC)
Forward BiasSafe
DS(on)
V
10
DD
0.1
= 75 V
T
V
J
10
DD
= 125
T
= 50 V
15
T
J
J
= 25 °C unless otherwise noted
= 25
o
V
1
C
DD
= 100 V
o
C
T
J
20
= 100
100
10
DC
1 ms
10 ms
100
o
C
μ
500
s
40
25
4
4000
1000
10000
100
60
50
40
30
20
10
1000
10
0
Figure 10.
100
1
25
0.1
10
Figure 12.
Package Limited
R
f = 1 MHz
V
-5
Figure 8.
θ
Current vs Case Temperature
GS
JC
= 0.94
= 0 V
50
V
DS
10
Maximum Continuous Drain
T
Power Dissipation
to Source Voltage
o
, DRAIN TO SOURCE VOLTAGE (V)
C
C/W
-4
, C
Single Pulse Maximum
Capacitance vs Drain
ASE TEMPERATURE (
t, PULSE WIDTH (sec)
1
75
10
V
GS
-3
= 6 V
100
10
V
-2
GS
10
SINGLE PULSE
R
T
C
θ
= 10 V
o
JC
C )
= 25
125
= 0.94
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10
o
C
C
-1
C
C
o
oss
rss
iss
C/W
150
100
1