FDP12N50NZ Fairchild Semiconductor, FDP12N50NZ Datasheet - Page 5

• Manufacturer Part Number: FDP12N50NZ
• Description: MOSFET N-CH 500V 11.5A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: UniFET-II™r

Specifications of FDP12N50NZ

• Input Capacitance (ciss) @ Vds: 1235pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 520 mOhm @ 5.75A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 11.5A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Power - Max: 170W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.46 Ohms
• Forward Transconductance Gfs (max / Min): 12 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 11.5 A
• Power Dissipation: 170 W
• Mounting Style: Through Hole
• Fall Time: 45 ns
• Gate Charge Qg: 23 nC
• Rise Time: 50 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP12N50NZ / FDPF12N50NZ Rev. A
Typical Performance Characteristics
Figure 12. Transient Thermal Response Curve - FDP12N50NZ
Figure 13. Transient Thermal Response Curve - FDPF12N50NZ
0.001
0.01
10
10
0.1
5
1
-1
-2
10
1
5
10
-5
-5
Single pulse
0.01
0.05
0.02
0.1
0.2
0.5
D=0.5
0.2
0.1
0.02
0.01
0.05
10
10
-4
-4
single pulse
t
1
, Square Wave Pulse Duration [sec]
Rectangular Pulse Duration [sec]
10
10
-3
-3
(Continued)
5
10
10
-2
-2
10
10
*Notes:
* Notes :
-1
P
1. Z
2. Duty Factor, D = t
3. T
1. Z
2. Duty Factor, D=t
3. T
-1
DM
θ
JM
P
θ
JM
JC
JC
DM
- T
(t) = 3.0
(t) = 0.73
- T
C
C
t
= P
1
= P
t
2
1
o
1
DM
t
DM
C/W Max.
1
o
t
C/W Max.
2
* Z
* Z
1
1
θ
/t
θ
/t
JC
2
JC
2
(t)
(t)
10
10
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