FDP12N50NZ Fairchild Semiconductor, FDP12N50NZ Datasheet - Page 9

• Manufacturer Part Number: FDP12N50NZ
• Description: MOSFET N-CH 500V 11.5A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: UniFET-II™r

Specifications of FDP12N50NZ

• Input Capacitance (ciss) @ Vds: 1235pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 520 mOhm @ 5.75A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 11.5A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Power - Max: 170W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.46 Ohms
• Forward Transconductance Gfs (max / Min): 12 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 11.5 A
• Power Dissipation: 170 W
• Mounting Style: Through Hole
• Fall Time: 45 ns
• Gate Charge Qg: 23 nC
• Rise Time: 50 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Package Dimensions
(Continued)
TO-220F
* Front/Back Side Isolation Voltage : 2500V
Dimensions in Millimeters
FDP12N50NZ / FDPF12N50NZ Rev. A
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