FGH60N60SMD Fairchild Semiconductor, FGH60N60SMD Datasheet - Page 4

• Manufacturer Part Number: FGH60N60SMD
• Description: IGBT 600V 60A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of FGH60N60SMD

• Igbt Type: Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 60A
• Current - Collector (ic) (max): 120A
• Power - Max: 600W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGH60N60SMD Rev. A1
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 3. Typical Saturation Voltage
Figure 5. Saturation Voltage vs. Case
180
150
120
180
150
120
90
60
30
90
60
30
0
0
3.5
3.0
2.5
2.0
1.5
1.0
0
0
25
T
Characteristics
Temperature at Variant Current Level
C
Common Emitter
V
T
T
= 25
GE
C
C
Collector-EmitterCase Temperature, T
Common Emitter
V
= 25
= 175
= 15V
GE
o
Collector-Emitter Voltage, V
Collector-Emitter Voltage, V
C
o
1
= 15V
50
C
o
C
2
75
15V
20V
2
100
12V
I
C
3
120A
60A
= 30A
4
125
CE
CE
[V]
4
[V]
V
GE
150
= 8V
10V
C
[
o
C]
6
5
175
4
Figure 2. Typical Output Characteristics
180
150
120
180
150
120
Figure 6. Saturation Voltage vs. V
Figure 4. Transfer Characteristics
90
60
30
90
60
30
20
16
12
0
0
8
4
0
0
2
4
T
Common Emitter
V
T
T
I
C
CE
C
C
C
= 175
= 25
= 175
= 30A
60A
= 20V
Collector-Emitter Voltage, V
o
4
C
o
o
C
C
Gate-Emitter Voltage,V
Gate-Emitter Voltage, V
8
2
120A
6
20V
15V
12
8
Common Emitter
T
4
C
12V
GE
GE
= -40
CE
16
[V]
[V]
V
10
[V]
GE
o
C
= 8V
10V
GE
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