FGH60N60SMD Fairchild Semiconductor, FGH60N60SMD Datasheet - Page 7
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FGH60N60SMD
Manufacturer Part Number
FGH60N60SMD
Description
IGBT 600V 60A TO-247
Manufacturer
Fairchild Semiconductor
Datasheet
1.FGH60N60SMD.pdf
(10 pages)
Specifications of FGH60N60SMD
Igbt Type
Field Stop
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 60A
Current - Collector (ic) (max)
120A
Power - Max
600W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FGH60N60SMD
Manufacturer:
FSC
Quantity:
1 500
Part Number:
FGH60N60SMD
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FGH60N60SMD Rev. A1
Typical Performance Characteristics
Figure 19. Current Derating
Figure 21. Forward Characteristics
Figure 23. Stored Charge
200
100
350
300
250
200
150
100
10
50
130
120
110
100
1
90
80
70
60
50
40
30
20
10
0
0
0
25
T
T
C
C
Collector-EmitterCase Temperature, T
= 25
= 175
10
50
o
C
o
di/dt = 200A/
C ----
1
T
Forward Voltage, V
C
Forwad Current, I
= 175
20
75
T
o
C
C
= 25
μ
T
s
2
100
C
30
= 75
o
C
T
di/dt = 100A/
C
o
C
= 125
F
Common Emitter
V
T
T
T
T
F
125
40
GE
[A]
C
C
C
C
[V]
= 25
= 75
= 125
= 175
= 15V
o
3
C
o
o
C
C ----
o
o
150
μ
C ----
C
50
s
C
[
o
C]
175
4
60
7
10000
1000
0.01
180
160
140
120
100
100
Figure 22. Reverse Current
100
Figure 20. Load Current Vs. Frequency
0.1
80
60
40
20
90
80
70
60
50
40
30
20
10
0
Figure 24. Reverse Recovery Time
1
1k
0
0
T
T
C
C
= 25
= 175
100
10
di/dt = 200A/
o
Tc = 100
C
o
Switching Frequency, f [Hz]
C ----
Reverse Voltage,V
Forward Current, I
10k
200
20
o
Square Wave
T
V
C
J
GE
T
T
μ
T
< 175
T
C
C
s
C
= 15/0V, R
C
= 175
= 125
= 75
300
= 25
30
Tc = 75
o
C, D = 0.5, V
o
o
o
C
o
C
C
C
100k
G
R
F
400
o
di/dt = 100A/
40
= 3
[V]
C
[A]
Ω
CE
= 400V
500
50
μ
s
www.fairchildsemi.com
600
1M
60