FGL35N120FTDTU Fairchild Semiconductor, FGL35N120FTDTU Datasheet - Page 6

• Manufacturer Part Number: FGL35N120FTDTU
• Description: IGBT 1200V 35A TO-264
• Manufacturer: Fairchild Semiconductor

Specifications of FGL35N120FTDTU

• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 35A
• Current - Collector (ic) (max): 70A
• Power - Max: 368W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-264-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGL35N120FTD Rev. A
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Figure 15. Turn-off Characteristics vs.
Figure 17. Switching Loss vs. Collector Current
2000
1000
100
600
100
0.3
10
50
50
1
10
10
0
Common Emitter
V
I
T
T
Common Emitter
V
T
T
C
C
C
CC
C
C
GE
= 35A
Collector Current
= 25
= 125
= 25
= 125
Gate Resistance
= 600V, V
= 15V, R
20
20
o
10
o
C
o
C
o
C
C
Gate Resistance, R
Collector Current, I
Collector Current, I
G
GE
30
30
= 10
= 15V
20
Ω
40
40
E
t
E
t
d(off)
f
on
off
Common Emitter
V
T
T
30
C
C
GE
t
= 25
= 125
t
G
C
d(off)
f
50
50
= 15V, R
[ Ω ]
C
[A]
[A]
o
C
o
C
40
G
60
60
= 10
Ω
70
50
70
6
Figure 18. Turn off Switing
Figure 14. Turn-on Characteristics vs.
Figure 16.Switching Loss vs. Gate Resistance
200
100
200
100
0.3
10
10
1
8
1
10
0
1
Safe Operating Area
V
GE
= 15V, T
Collector Current
SOA Characteristics
20
Collector-Emitter Voltage, V
10
Collector Current, I
Gate Resistance, R
10
C
= 125
30
20
t
t
o
r
d(on)
C
40
E
E
on
off
Common Emitter
V
I
T
T
100
C
CC
C
C
Common Emitter
V
T
T
= 35A
30
= 25
= 125
C
C
GE
= 600V, V
= 25
= 125
50
C
G
= 15V, R
o
[A]
[ Ω ]
C
o
o
C
C
o
CE
C
40
[V]
GE
G
60
www.fairchildsemi.com
1000 3000
= 10
= 15V
Ω
70
50