FGL35N120FTDTU Fairchild Semiconductor, FGL35N120FTDTU Datasheet - Page 7

• Manufacturer Part Number: FGL35N120FTDTU
• Description: IGBT 1200V 35A TO-264
• Manufacturer: Fairchild Semiconductor

Specifications of FGL35N120FTDTU

• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 35A
• Current - Collector (ic) (max): 70A
• Power - Max: 368W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-264-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGL35N120FTD Rev. A
Typical Performance Characteristics
Figure 21. Stored Charge
Figure 19. Forward Characteristics
10
0.2
50
1
1.4
1.2
1.0
0.8
0.6
0.0
10
0.5
T
J
= 125
Forward Voltage, V
di/dt = 200A/
Forward Current, I
1.0
o
C
20
0.001
0.01
0.1
1.5
1
1E-5
µ
s
Figure 23.Transient Thermal Impedance of IGBT
di/dt = 100A/
0.1
0.05
0.02
0.01
single pulse
0.5
0.2
T
J
= 25
2.0
F
F
30
[A]
T
T
[V]
C
C
o
C
0.0001
= 25
= 125
µ
s
2.5
o
C
o
C
3.0
40
Rectangular Pulse Duration [sec]
0.001
Figure 20. Reverse Recovery Current
7
Figure 22. Reverse Recovery Time
0.01
600
500
400
300
200
100
8
7
6
5
4
3
10
10
0.1
Duty Factor, D = t1/t2
Peak T
P
DM
di/dt = 100A/
j
Forward Current, I
= Pdm x Zthjc + T
Forward Current, I
di/dt = 200A/
t
di/dt = 200A/
1
t
20
2
20
1
µ
s
µ
di/dt = 100A/
s
µ
s
C
10
F
F
30
[A]
30
[A]
µ
s
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40
40