IS42S32800B-7BL INTEGRATED SILICON SOLUTION (ISSI), IS42S32800B-7BL Datasheet - Page 22

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IS42S32800B-7BL

Manufacturer Part Number
IS42S32800B-7BL
Description
IC, SDRAM, 256MBIT, 143MHZ, BGA-90
Manufacturer
INTEGRATED SILICON SOLUTION (ISSI)
Datasheet

Specifications of IS42S32800B-7BL

Memory Type
DRAM - Sychronous
Access Time
7ns
Page Size
256Mbit
Ic Interface Type
Parallel
Memory Case Style
BGA
No. Of Pins
90
Operating Temperature Range
0°C To +70°C
Termination Type
SMD
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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E
IS42S32800B
22
Note:
1. Stress greater than those listed under “Absolute Maximum Ratings”may cause permanent damage to the device.
2. All voltages are referenced to VSS.
3. These parameters depend on the cycle rate and these values are measured by the cycle rate under the minimum value of
4. These parameters depend on the output loading.Specified values are obtained with the output open.
5. Power-up sequence is described in Note 11.
* CL is CAS# Latency.
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
RC
RRD
RCD
RP
RAS
CK2
CK3
OH
CH
CL
IS
IH
LZ
HZ
WR
CCD
MRS
AC
tCK and tRC.Input signals are changed one time during tCK.
AC Electrical Characteristics (Recommended Operating Conditions)
Row cycle time
(same bank)
Row activate to row activate delay
(different banks)
RAS# to CAS# delay
(same bank)
Precharge to refresh/row activate command
(same bank)
Row activate to precharge time
(same bank)
Clock cycle time
Access time from CLK
(positive edge)
Data output hold time
Clock high time
Clock low time
Data/Address/Control Input set-up time
Data/Address/Control Input hold time
Data output low impedance
Data output high impedance
Write Recovery Time
CAS# to CAS# Delay time
Mode Register Set cycle time
A.C. Parameter
CL* = 2
CL* = 3
2.5/2.5
7.5/10
2.5/2.5
2.0/2.0
60/70
18/20
12/14
42/45
18/20
Min.
2/2.5
6/7
1
1
2
1
2
- 6/7
Integrated Silicon Solution, Inc.
120,000
5.5/5.5
Max.
5.4
5,6,7,8
Unit
CLK
ns
Note
10
10
10
10
9
9
9
9
9
9
9
8
07/21/09
9
Rev. F

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