IS43R16160B-6TL INTEGRATED SILICON SOLUTION (ISSI), IS43R16160B-6TL Datasheet - Page 21

• Manufacturer Part Number: IS43R16160B-6TL
• Description: SDRAM, DDR, 16M X 16, 2.5V, 66TSOP2
• Manufacturer: INTEGRATED SILICON SOLUTION (ISSI)

Specifications of IS43R16160B-6TL

• Access Time: 0.7ns
• Page Size: 256Mbit
• Memory Case Style: TSOP-2
• No. Of Pins: 66
• Operating Temperature Range: 0°C To +70°C
• Memory Type: DRAM - Synchronous
• Memory Configuration: 4 BLK (4M X 16)
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

DDR SDRAM (Rev.1.1)
IS43R83200B
IS43R16160B, IC43R16160B
Integrated Silicon Solution, Inc.
Rev. B
10/31/08
AC TIMING REQUIREMENTS(Continues)
Output Load Condition
Symbol
tXSNR Exit Self Ref. to non-Read command
tXSRD Exit Self Ref. to -Read command
tXPNR Exit Power down to command
tXPRD Exit Power down to -Read command
tWTR
tREFI
tRCD
tRRD
tDAL
tRAS
tRFC
tWR
tRC
tRP
V
OUT
Row Active time
Row Cycle time(operation)
Auto Ref. to Active/Auto Ref. command period
Row to Column Delay
Row Precharge time
Act to Act Delay time
Write Recovery time
Auto Precharge write recovery + precharge time
Internal Write to Read Command Delay
Average Periodic Refresh interval
AC Characteristics Parameter
Zo=50
Preliminary
Preliminary
V
TT
=V
30pF
50
REF
V
REF
tWR+tRP
Min.
200
40
55
70
15
15
10
15
75
2
1
1
-5
120,000
256M Double Data Rate Synchronous DRAM
Max
7.8
DQS
tWR+tRP
Min.
200
42
60
72
18
18
12
15
75
1
1
1
-6
120,000
Max
7.8
Zentel Electronics Corporation
tWR+tRP
DQ
A3S56D30/40ETP
Min.
200
Output Timing
Measurement
Reference Point
45
65
75
20
20
15
15
75
1
1
1
-75
120,000
Max
7.8
tCK
tCK
tCK
tCK
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
s
Notes
18
17
V
V
REF
REF
21