IS43R16160B-6TL INTEGRATED SILICON SOLUTION (ISSI), IS43R16160B-6TL Datasheet - Page 34
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IS43R16160B-6TL
Manufacturer Part Number
IS43R16160B-6TL
Description
SDRAM, DDR, 16M X 16, 2.5V, 66TSOP2
Manufacturer
INTEGRATED SILICON SOLUTION (ISSI)
Datasheet
1.IS43R16160B-6TL.pdf
(40 pages)
Specifications of IS43R16160B-6TL
Access Time
0.7ns
Page Size
256Mbit
Memory Case Style
TSOP-2
No. Of Pins
66
Operating Temperature Range
0°C To +70°C
Memory Type
DRAM - Synchronous
Memory Configuration
4 BLK (4M X 16)
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IS43R16160B-6TL
Manufacturer:
ISSI
Quantity:
20 000
Company:
Part Number:
IS43R16160B-6TLI
Manufacturer:
TEMIC
Quantity:
782
Part Number:
IS43R16160B-6TLI
Manufacturer:
ISSI
Quantity:
20 000
IS43R83200B
IS43R16160B, IC43R16160B
34
DDR SDRAM (Rev.1.1)
I
I
[Write interrupted by Precharge]
access is allowed. tWR is referenced from the first positive CLK edge after the last data input.
Burst write operation can be interrupted by precharge of the same or all bank. Random column
Command
A0-9,11,12
BA0,1
/CLK
CLK
A10
DM
DQ
QS
WRITE
Yi
0
00
Preliminary
Preliminary
Dai0 Dai1
Write Interrupted by Precharge (BL=8, CL=2.5)
tWR
PRE
00
256M Double Data Rate Synchronous DRAM
Zentel Electronics Corporation
A3S56D30/40ETP
Integrated Silicon Solution, Inc.
10/31/08
Rev. B