2ED020I12-FI Infineon Technologies, 2ED020I12-FI Datasheet - Page 13

• Manufacturer Part Number: 2ED020I12-FI
• Description: IC, IGBT DRIVER, DUAL, PG-DSO-18-2
• Manufacturer: Infineon Technologies
• Type: MOSFET/IGBT Driverr

Specifications of 2ED020I12-FI

• Device Type: IGBT
• Module Configuration: High Side
• Peak Output Current: 2A
• Input Delay: 85ns
• Output Delay: 85ns
• Supply Voltage Range: 14V To 18V
• Driver Case Style: SO
• No. Of Pins: 18
• Operating: RoHS Compliant
• Product: Half-Bridge Drivers
• Rise Time: 40 ns
• Fall Time: 35 ns
• Supply Voltage (min): 14 V
• Supply Current: 2.3 mA
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Package / Case: PG-DSO-18-2
• Minimum Operating Temperature: - 40 C
• Number Of Drivers: 2
• Number Of Outputs: 2
• Output Current: 5 mA
• Output Voltage: 5.3 V
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Voltage Supply (cont’d)
Parameter
Low side quiescent
supply current
Low side undervoltage
lockout, upper threshold
Low side undervoltage
lockout, lower threshold
Low side undervoltage
lockout hysteresis
1)
Logic Inputs
Parameter
Logic “1” input voltages
(InH, InL, SD)
Logic “0” input voltages
(InH, InL, SD)
Logic “1” input currents
(InH, InL)
Logic “0” input currents
(InH, InL)
Logic “1” input currents
(SD)
Logic “0” input currents
(SD)
Final Datasheet
With reference to high side ground GNDH.
Symbol
I
V
V
Symbol
V
V
I
I
I
I
VSL
IN
IN
IN
IN
V
VSL
VSL
IN
IN
Final Data
VSL
min.
10.7
0.7
min.
2
–60
—
—
—
—
—
—
Limit Values
Limit Values
13
typ
3.9
3.9
12
11
1
typ
0
0
–40
40
—
—
max.
5.0
5.5
13.3
1.3
max.
0.8
55
—
—
—
—
—
High and Low Side Driver
Unit
mA
mA
V
V
V
Unit
V
V
A
A
A
A
Electrical Parameters
VSL = 15 V
VSL = 15 V
T
Test Condition
V
V
V
V
Test Condition
J
IN
IN
IN
IN
= 125 °C
= 5 V
= 0 V
= 5 V
= 0 V
2ED020I12-FI
September 2007