2ED020I12-FI Infineon Technologies, 2ED020I12-FI Datasheet - Page 4

• Manufacturer Part Number: 2ED020I12-FI
• Description: IC, IGBT DRIVER, DUAL, PG-DSO-18-2
• Manufacturer: Infineon Technologies
• Type: MOSFET/IGBT Driverr

Specifications of 2ED020I12-FI

• Device Type: IGBT
• Module Configuration: High Side
• Peak Output Current: 2A
• Input Delay: 85ns
• Output Delay: 85ns
• Supply Voltage Range: 14V To 18V
• Driver Case Style: SO
• No. Of Pins: 18
• Operating: RoHS Compliant
• Product: Half-Bridge Drivers
• Rise Time: 40 ns
• Fall Time: 35 ns
• Supply Voltage (min): 14 V
• Supply Current: 2.3 mA
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Package / Case: PG-DSO-18-2
• Minimum Operating Temperature: - 40 C
• Number Of Drivers: 2
• Number Of Outputs: 2
• Output Current: 5 mA
• Output Voltage: 5.3 V
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

High and Low Side Driver
Final Data
2ED020I12-FI
Overview
1
Overview
The 2ED020I12-FI is a high voltage, high speed power MOSFET and IGBT driver with
interlocking high and low side referenced outputs. The floating high side driver may be
supplied directly or by means of a bootstrap diode and capacitor. In addition to the logic
input of each driver the 2ED020I12-FI is equipped with a dedicated shutdown input. All
logic inputs are compatible with 3.3 V and 5 V TTL. The output drivers feature a high
pulse current buffer stage designed for minimum driver cross-conduction. Propagation
delays are matched to simplify use in high frequency applications. Both drivers are
designed to drive an N-channel power MOSFET or IGBT which operate up to 1.2 kV. In
addition, a general purpose operational amplifier and a general purpose comparator are
provided which may be used for instance for current measurement or overcurrent
detection.
Final Datasheet
4
September 2007