P89LPC916FDH NXP Semiconductors, P89LPC916FDH Datasheet - Page 51

• Manufacturer Part Number: P89LPC916FDH
• Description: MCU 8BIT 80C51 2K FLASH, TSSOP16
• Manufacturer: NXP Semiconductors

Specifications of P89LPC916FDH

• Controller Family/series: (8051) 8052
• Core Size: 8bit
• No. Of I/o's: 14
• Program Memory Size: 2KB
• Ram Memory Size: 256Byte
• Cpu Speed: 18MHz
• Oscillator Type: Internal Only
• No. Of Timers: 4
• Digital Ic: RoHS Compliant

NXP Semiconductors
P89LPC915_916_917_5
Product data sheet
8.26.1 General description
8.26.2 Features
8.26.3 Flash organization
8.26.4 Using flash as data storage
8.26.5 Flash programming and erasing
8.26 Flash program memory
The P89LPC915/916/917 flash memory provides in-circuit electrical erasure and
programming. The flash can be erased, read, and written as bytes. The Sector and Page
Erase functions can erase any flash sector (256 bytes) or page (16 bytes). The Chip
Erase operation will erase the entire program memory. ICP using standard commercial
programmers is available. In addition, IAP and byte-erase allows code memory to be used
for non-volatile data storage. On-chip erase and write timing generation contribute to a
user-friendly programming interface. The P89LPC915/916/917 flash reliably stores
memory contents even after 100,000 erase and program cycles. The cell is designed to
optimize the erase and programming mechanisms. The P89LPC915/916/917 uses V
the supply voltage to perform the Program/Erase algorithms.
The program memory consists of eight 256-byte sectors on the P89LPC915/916/917
devices. Each sector can be further divided into 16-byte pages. In addition to sector
erase, page erase, and byte erase, a 16-byte page register is included which allows from
1 to 16 bytes of a given page to be programmed at the same time, substantially reducing
overall programming time.
The flash code memory array of this device supports individual byte erasing and
programming. Any byte in the code memory array may be read using the MOVC
instruction, provided that the sector containing the byte has not been secured (a MOVC
instruction is not allowed to read code memory contents of a secured sector). Thus any
byte in a non-secured sector may be used for non-volatile data storage.
Two different methods of erasing or programming of the flash are available. The flash may
be programmed or erased in the end-user application (IAP-Lite) under control of the
application’s firmware. Another option is to use the ICP mechanism. This ICP system
provides for programming through a serial clock/serial data interface. This device does not
provide for direct verification of code memory contents. Instead, this device provides a
32-bit CRC result on either a sector or the entire user code space.
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Programming and erase over the full operating voltage range.
Byte erase allows code memory to be used for data storage.
Read/Programming/Erase using ICP.
Boot vector allows user-provided flash loader code to reside anywhere in the flash
memory space, providing flexibility to the user.
Any flash program/erase operation in 2 ms.
Programming with industry-standard commercial programmers.
Programmable security for the code in the flash for each sector.
100,000 typical erase/program cycles for each byte.
10 year minimum data retention.
Rev. 05 — 15 December 2009
8-bit microcontrollers with accelerated two-clock 80C51 core
P89LPC915/916/917
© NXP B.V. 2009. All rights reserved.
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