NTHS0603N10N1502JE Vishay, NTHS0603N10N1502JE Datasheet - Page 4

• Manufacturer Part Number: NTHS0603N10N1502JE
• Description: THERMISTOR NTC 15K OHM 5% 0603
• Manufacturer: Vishay
• Series: NTHSr

Specifications of NTHS0603N10N1502JE

• Resistance In Ohms @ 25°c: 15K
• Resistance Tolerance: ±5%
• B Value Tolerance: ±3%
• B25/75: 3500K
• Mounting Type: Surface Mount
• Package / Case: 0603 (1608 Metric)
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS Compliant
• B0/50: -
• B25/50: -
• B25/85: -
• B25/100: -
• Operating Temperature: -
• Power - Max: -
• Lead Length: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 541-1114-2

General Description
4
The S29GL-N family of devices are 3.0-Volt single-power Flash memory manufactured using 110 nm
MirrorBit technology. The S29GL064N is a 64-Mb device organized as 4,194,304 words or 8,388,608 bytes.
The S29GL032N is a 32-Mb device organized as 2,097,152 words or 4,194,304 bytes. Depending on the
model number, the devices have 16-bit wide data bus only, or a 16-bit wide data bus that can also function as
an 8-bit wide data bus by using the BYTE# input. The devices can be programmed either in the host system
or in standard EPROM programmers.
Access times as fast as 90 ns are available. Note that each access time has a specific operating voltage
range (V
Ordering
BGA and 64-ball Fortified BGA, depending on model number. Each device has separate chip enable (CE#),
write enable (WE#) and output enable (OE#) controls.
Each device requires only a single 3.0-Volt power supply for both read and write functions. In addition to a
V
increased voltage on the WP#/ACC or ACC input. This feature is intended to facilitate factory throughput
during system production, but may also be used in the field if desired.
The device is entirely command set compatible with the JEDEC single-power-supply Flash standard.
Commands are written to the device using standard microprocessor write timing. Write cycles also internally
latch addresses and data needed for the programming and erase operations.
The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the
data contents of other sectors. The device is fully erased when shipped from the factory.
The Advanced Sector Protection features several levels of sector protection, which can disable both the
program and erase operations in certain sectors. Persistent Sector Protection is a method that replaces the
previous 12-volt controlled protection method. Password Sector Protection is a highly sophisticated protection
method that requires a password before changes to certain sectors are permitted.
Device programming and erasure are initiated through command sequences. Once a program or erase
operation begins, the host system need only poll the DQ7 (Data# Polling) or DQ6 (toggle) status bits or
monitor the Ready/Busy# (RY/BY#) output to determine whether the operation is complete. To facilitate
programming, an Unlock Bypass mode reduces command sequence overhead by requiring only two write
cycles to program data instead of four.
Hardware data protection measures include a low V
during power transitions. The hardware sector protection feature disables both program and erase operations
in any combination of sectors of memory. This can be achieved in-system or via programming equipment.
The Erase Suspend/Erase Resume feature allows the host system to pause an erase operation in a given
sector to read or program any other sector and then complete the erase operation. The Program Suspend/
Program Resume feature enables the host system to pause a program operation in a given sector to read
any other sector and then complete the program operation.
The hardware RESET# pin terminates any operation in progress and resets the device, after which it is then
ready for a new operation. The RESET# pin may be tied to the system reset circuitry. A system reset would
thus also reset the device, enabling the host system to read boot-up firmware from the Flash memory device.
The device reduces power consumption in the standby mode when it detects specific voltage levels on CE#
and RESET#, or when addresses are stable for a specified period of time.
The Write Protect (WP#) feature protects the first or last sector by asserting a logic low on the WP#/ACC pin
or WP# pin, depending on model number. The protected sector is still protected even during accelerated
programming.
The Secured Silicon Sector provides a 128-word/256-byte area for code or data that can be permanently
protected. Once this sector is protected, no further changes within the sector can occur.
Spansion MirrorBit flash technology combines years of Flash memory manufacturing experience to produce
the highest levels of quality, reliability and cost effectiveness. The device electrically erases all bits within a
sector simultaneously via hot-hole assisted erase. The data is programmed using hot electron injection.
CC
input, a high-voltage accelerated program (ACC) feature provides shorter programming times through
CC
Information–S29GL064N. Package offerings include 48-pin TSOP, 56-pin TSOP, 48-ball fine-pitch
) as specified in the
S29GL-N MirrorBit
Product Selector Guide
D a t a
®
Flash Family
CC
S h e e t
and the
detector that automatically inhibits write operations
Ordering
Information–S29GL032N, and
S29GL-N_01_12 October 29, 2008