FP10R12W1T4_B11 Infineon Technologies, FP10R12W1T4_B11 Datasheet - Page 2

• Manufacturer Part Number: FP10R12W1T4_B11
• Description: IGBT Module
• Manufacturer: Infineon Technologies

Specifications of FP10R12W1T4_B11

• Transistor Polarity: N Channel
• Dc Collector Current: 10A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 105W
• No. Of Pins: 23
• Collector Emitter Saturation Voltage Vce(sat): 1.85V
• Rohs Compliant: Yes
• Packages: AG-EASY1B-1
• Ic (max): 10.0 A
• Vce(sat) (typ): 1.85 V
• Configuration: PIM Three Phase Input Rectifier
• Technology: IGBT4
• Housing: EasyPIM™ 1B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Technische Information / technical information
IGBT-Module
IGBT-modules
Diode-Wechselrichter / diode-inverter
Höchstzulässige Werte / maximum rated values
Charakteristische Werte / characteristic values
Diode-Gleichrichter / diode-rectifier
Höchstzulässige Werte / maximum rated values
Charakteristische Werte / characteristic values
FP10R12W1T4_B11
2
Vorläufige Daten
preliminary data