FP10R12W1T4_B11 Infineon Technologies, FP10R12W1T4_B11 Datasheet - Page 8
FP10R12W1T4_B11
Manufacturer Part Number
FP10R12W1T4_B11
Description
IGBT Module
Manufacturer
Infineon Technologies
Datasheet
1.FP10R12W1T4_B11.pdf
(11 pages)
Specifications of FP10R12W1T4_B11
Transistor Polarity
N Channel
Dc Collector Current
10A
Collector Emitter Voltage Vces
1.2kV
Power Dissipation Pd
105W
No. Of Pins
23
Collector Emitter Saturation Voltage Vce(sat)
1.85V
Rohs Compliant
Yes
Packages
AG-EASY1B-1
Ic (max)
10.0 A
Vce(sat) (typ)
1.85 V
Configuration
PIM Three Phase Input Rectifier
Technology
IGBT4
Housing
EasyPIM 1B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FP10R12W1T4_B11
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Technische Information / technical information
IGBT-Module
IGBT-modules
1,0
0,8
0,6
0,4
0,2
0,0
0,1
10
1
0,001
0
2
4
0,01
6
τ
FP10R12W1T4_B11
8
0,1
10 12 14 16 18 20
1
10
8
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
20
18
16
14
12
10
8
6
4
2
0
0,0
0 40 80 120 160 200 240 280 320 360 400 440 480
0,2
0,4
0,6
Vorläufige Daten
preliminary data
0,8
1,0
1,2
1,4