BSM100GB120DN2 Infineon Technologies, BSM100GB120DN2 Datasheet - Page 4

• Manufacturer Part Number: BSM100GB120DN2
• Description: IGBT Modules 1200V 100A DUAL
• Manufacturer: Infineon Technologies

Specifications of BSM100GB120DN2

• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.5 V
• Continuous Collector Current At 25 C: 150 A
• Gate-emitter Leakage Current: 200 nA
• Power Dissipation: 800 W
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: 20 V
• Mounting Style: Screw
• Package / Case: Half Bridge2
• Ic (max): 100.0 A
• Vce(sat) (typ): 2.5 V
• Technology: IGBT2 Standard
• Housing: 62 mm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power dissipation
P
parameter: T
P
Collector current
I
parameter: V
Semiconductor Group
C
tot
I
tot
C
= ( T
= ( T
900
700
600
500
400
300
200
100
160
120
100
80
60
40
20
W
A
0
0
C
0
0
)
C
)
20
20
j
GE
150 °C
40
40
15 V , T
60
60
j
80
80
150 °C
100
100
120
120
T
T
°C
°C
C
C
160
160
4
Safe operating area
I
parameter: D = 0 , T
Transient thermal impedance
Z
parameter: D = t
Z
C
thJC
I
th JC
C
= ( V
K/W
10
10
10
10
10
10
10
10
10
10
= ( t
A
-1
-1
-2
-3
-4
3
2
1
0
0
10
10
CE
0
-5
)
p
)
single pulse
10
p
10
-4
/ T
1
C
BSM 100 GB 120 DN2
= 25°C , T
10
-3
10
2
10
j
-2
IGBT
DC
150 °C
t p = 14.0µs
10
D = 0.50
Mar-29-1996
10
3
100 µs
1 ms
10 ms
V
t
-1
p
0.20
0.10
0.05
0.02
0.01
CE
V
s
10
0