BSM100GB120DN2 Infineon Technologies, BSM100GB120DN2 Datasheet - Page 6

• Manufacturer Part Number: BSM100GB120DN2
• Description: IGBT Modules 1200V 100A DUAL
• Manufacturer: Infineon Technologies

Specifications of BSM100GB120DN2

• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.5 V
• Continuous Collector Current At 25 C: 150 A
• Gate-emitter Leakage Current: 200 nA
• Power Dissipation: 800 W
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: 20 V
• Mounting Style: Screw
• Package / Case: Half Bridge2
• Ic (max): 100.0 A
• Vce(sat) (typ): 2.5 V
• Technology: IGBT2 Standard
• Housing: 62 mm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

I
Cpuls
Typ. gate charge
V
parameter: I
Reverse biased safe operating area
I
Semiconductor Group
parameter: V
Cpuls
V
GE
GE
/ I
C
= ( Q
= f(V
2.5
1.5
1.0
0.5
0.0
20
16
14
12
10
V
8
6
4
2
0
0
0
Gate
CE
200
C puls
100
)
GE
)
,
= 15 V
400
T
= 100 A
j
200
= 150°C
600
300
800 1000 1200
600 V
400
500
800 V
Q
nC
V
V
Gate
CE
1600
650
6
I
Typ. capacitances
C = f ( V
Short circuit safe operating area
I
Csc
parameter: V
Csc
parameter: V
C
/ I
C
= f(V
10
10
10
10
nF
12
-1
8
6
4
2
0
2
1
0
0
CE
0
CE
)
) , T
200
5
GE
GE
j
= ± 15 V, t
= 150°C
400
= 0 V, f = 1 MHz
10
BSM 100 GB 120 DN2
600
15
800
SC
20
1000 1200
25
10 µs, L < 25 nH
30
Mar-29-1996
V
V
V
V
CE
CE
Ciss
Coss
Crss
1600
40