BSM200GA120DLCS Infineon Technologies, BSM200GA120DLCS Datasheet - Page 3
BSM200GA120DLCS
Manufacturer Part Number
BSM200GA120DLCS
Description
IGBT Modules 1200V 200A SINGLE
Manufacturer
Infineon Technologies
Datasheet
1.BSM200GA120DLCS.pdf
(8 pages)
Specifications of BSM200GA120DLCS
Configuration
Single Dual Emitter
Collector- Emitter Voltage Vceo Max
1200 V
Collector-emitter Saturation Voltage
2.1 V
Continuous Collector Current At 25 C
370 A
Gate-emitter Leakage Current
400 nA
Power Dissipation
1450 W
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
62MM
Ic (max)
200.0 A
Vce(sat) (typ)
2.1 V
Technology
IGBT2 Low Loss
Housing
62 mm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSM200GA120DLCS
Quantity:
50
Technische Information / technical information
IGBT-Module
IGBT-modules
Modul / module
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine
Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen technischen Erläuterungen.
This technical information specifies semiconductor devices but guarantees no characteristics.
It is valid with the appropriate technical explanations.
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