BSM200GA120DLCS Infineon Technologies, BSM200GA120DLCS Datasheet - Page 5

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BSM200GA120DLCS

Manufacturer Part Number
BSM200GA120DLCS
Description
IGBT Modules 1200V 200A SINGLE
Manufacturer
Infineon Technologies
Datasheet

Specifications of BSM200GA120DLCS

Configuration
Single Dual Emitter
Collector- Emitter Voltage Vceo Max
1200 V
Collector-emitter Saturation Voltage
2.1 V
Continuous Collector Current At 25 C
370 A
Gate-emitter Leakage Current
400 nA
Power Dissipation
1450 W
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
62MM
Ic (max)
200.0 A
Vce(sat) (typ)
2.1 V
Technology
IGBT2 Low Loss
Housing
62 mm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSM200GA120DLCS
Quantity:
50
Technische Information / technical information
IGBT-Module
IGBT-modules
$
$
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