FZ1200R17KE3_B2 Infineon Technologies, FZ1200R17KE3_B2 Datasheet - Page 3
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FZ1200R17KE3_B2
Manufacturer Part Number
FZ1200R17KE3_B2
Description
IGBT Modules N-CH 1.7KV 1.9KA
Manufacturer
Infineon Technologies
Datasheet
1.FZ1200R17KE3_B2.pdf
(8 pages)
Specifications of FZ1200R17KE3_B2
Configuration
Dual
Collector- Emitter Voltage Vceo Max
1700 V
Continuous Collector Current At 25 C
1900 A
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
IHM130
Ic (max)
1,200.0 A
Vce(sat) (typ)
2.0 V
Technology
IGBT3
Housing
IHM 130 mm
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FZ1200R17KE3_B2
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Technische Information / technical information
IGBT-Module
IGBT-modules
Modul / module
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine
Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen technischen Erläuterungen.
This technical information specifies semiconductor devices but guarantees no characteristics.
It is valid with the appropriate technical explanations.
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