FZ1200R17KE3_B2 Infineon Technologies, FZ1200R17KE3_B2 Datasheet - Page 5
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FZ1200R17KE3_B2
Manufacturer Part Number
FZ1200R17KE3_B2
Description
IGBT Modules N-CH 1.7KV 1.9KA
Manufacturer
Infineon Technologies
Datasheet
1.FZ1200R17KE3_B2.pdf
(8 pages)
Specifications of FZ1200R17KE3_B2
Configuration
Dual
Collector- Emitter Voltage Vceo Max
1700 V
Continuous Collector Current At 25 C
1900 A
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
IHM130
Ic (max)
1,200.0 A
Vce(sat) (typ)
2.0 V
Technology
IGBT3
Housing
IHM 130 mm
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FZ1200R17KE3_B2
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Technische Information / technical information
IGBT-Module
IGBT-modules
'
'
%98 , VODW6 %9ZZ , VODW
%98 , VODW6 %9ZZ , VODW
/D1 , X"- /6 70 , "
/D1 , X"- /6 70 , "
'
'
70 , V/01W
70 , V/01W
/D1 , X"- /6 OD9ZZ , "6- Q6 )*+ , " -.
/D1 , X"- /6 OD9ZZ , "6- Q6 )*+ , " -.
'
'
%98 , VODW6 %9ZZ , VODW
%98 , VODW6 %9ZZ , VODW
/D1 , X"- /6 70 , "
/D1 , X"- /6 70 , "
'
'
70 , V/01W
70 , V/01W
/D1 , X"- /6 OD9ZZ , "6- Q6 )*+ , " -.
/D1 , X"- /6 OD9ZZ , "6- Q6 )*+ , " -.
B
B
B
B
2000
1800
1600
1400
1200
1000
2600
2400
2200
2000
1800
1600
1400
1200
1000
800
600
400
200
800
600
400
200
0
0
(
(
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0
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O
O
O
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1
200 400 600 800 1000 1200 1400 1600 1800
BH
BH
BH
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FZ1200R17KE3_B2
/01 s/t
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# V
# V
# V
V
V
V
V
6
7Aa)
7Aa)
7Aa)
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7
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W
W
W
W
W
W
W
W
8
# VOa'v<W
# VOa'v<W
# VOa'v<W
# VOa'v<W
9 10 11 12
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# VOa'v<W
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5
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uCKb0 , V W
uCKb0 , V W
uCKb0 , V W
uCKb0 , V W
4
4
4
4
7g , V/gW
7g , V/gW
7g , V/gW
7g , V/gW
! ""
B
B
B
B
2400
2200
2000
1800
1600
1400
1200
1000
100
800
600
400
200
0,1
10
1
0,001
0
0,0
\
\
\
\
&
&
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H & B
H & B
H & B
H & B
0,5
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)*+ , " -.
&
&
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&
0,01
4
4
4
4
1,0
Vorläufige Daten
preliminary data
7Aa)
7Aa)
7Aa)
7Aa)
/g s/t
7Aa)
7Aa)
7Aa)
7Aa)
Ps$F
0,1
1,5
Ps t
s t
t
"
65
6 "
# V
# V
# V
# V
V
V
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2,0
65
6
1
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#
#
W
W
#
#
W
W
6 ;
2,5
W
W
W
W
65
6
3,0
10