FZ200R65KF1 Infineon Technologies, FZ200R65KF1 Datasheet - Page 6

• Manufacturer Part Number: FZ200R65KF1
• Description: IGBT Modules N-CH 6.3KV 400A
• Manufacturer: Infineon Technologies

Specifications of FZ200R65KF1

• Configuration: Single Dual Collector Dual Emitter
• Collector- Emitter Voltage Vceo Max: 6300 V
• Continuous Collector Current At 25 C: 400 A
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IHV73

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
Schaltverluste (typisch)
Switching losses (typical)
Schaltverluste (typisch)
Switching losses (typical)
4000
3600
3200
2800
2400
2000
1600
1200
5500
5000
4500
4000
3500
3000
2500
2000
1500
1000
800
400
500
0
0
0
0
10
50
20
30
100
Eon
Eoff
Erec
E
on
40
R
FZ 200 R 65 KF1
Gon
= f (I
=13 , R
I
C
150
= 200A , V
50
E
C
on
) , E
Goff
= f (R
60
=75 , C
off
CE
200
= 3600V , V
= f (I
G
70
R
I
) , E
GE
6
C
G
= 22nF, V
[A]
[ ]
C
) , E
off
80
GE
250
= f (R
=±15V, C
rec
GE
90
=±15V, V
= f (I
G
GE
) , E
=22nF , T
100
300
C
CE
)
Eon
Eoff
Erec
rec
= 3600V, T
110
= f (R
vj
= 125°C
350
120
vj
G
= 125°C,
)
130
400
140
150
450
FZ 200 R65 KF1 (final 1).xls