FZ200R65KF1 Infineon Technologies, FZ200R65KF1 Datasheet - Page 8

• Manufacturer Part Number: FZ200R65KF1
• Description: IGBT Modules N-CH 6.3KV 400A
• Manufacturer: Infineon Technologies

Specifications of FZ200R65KF1

• Configuration: Single Dual Collector Dual Emitter
• Collector- Emitter Voltage Vceo Max: 6300 V
• Continuous Collector Current At 25 C: 400 A
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IHV73

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
0,001
0,01
0,1
r
r
i
i
[K/kW]
[K/kW]
0,001
i
i
i
[s]
[s]
Transienter Wärmewiderstand
Transient thermal impedance
FZ 200 R 65 KF1
: Diode
: Diode
: IGBT
: IGBT
0,01
14,85
0,030
28,35
0,030
1
0,1
8
15,75
t [s]
8,25
0,10
0,10
2
1
Z
thJC
Zth:Diode
Zth:IGBT
1,98
0,30
3,78
0,30
= f (t)
3
10
15,12
7,92
1,0
1,0
4
100
FZ 200 R65 KF1 (final 1).xls