FMC7G10US60 Fairchild Semiconductor, FMC7G10US60 Datasheet

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FMC7G10US60

Manufacturer Part Number
FMC7G10US60
Description
IGBT Modules
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FMC7G10US60

Configuration
Hex
Collector- Emitter Voltage Vceo Max
600 V
Collector-emitter Saturation Voltage
2.2 V
Continuous Collector Current At 25 C
10 A
Gate-emitter Leakage Current
100 nA
Power Dissipation
36 W
Maximum Operating Temperature
+ 150 C
Maximum Gate Emitter Voltage
20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
PM-AA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FMC7G10US60
Manufacturer:
IR
Quantity:
1 000
Part Number:
FMC7G10US60
Quantity:
55
©2001 Fairchild Semiconductor Corporation
FMC7G10US60
Compact & Complex Module
General Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power
modules provide low conduction and switching losses as
well as short circuit ruggedness. They are designed for
applications such as motor control, uninterrupted power
supplies (UPS) and general inverters where short circuit
ruggedness is a required feature.
Features
• UL Certified No. E209204
• Short circuit rated 10us @ T
• High speed switching
• Low saturation voltage : V
• High input impedance
• Built in brake and 3 phase rectifier circuit
• Fast & soft anti-parallel FWD
Applications
• AC & DC motor controls
• General purpose inverters
• Robotics
• Servo controls
Absolute Maximum Ratings
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Inverter
&
Brake
Converter
Common
Mounting Torque
V
V
I
I
I
I
P
T
V
I
I
I
T
T
V
C
CM (1)
F
FM
O
FSM
2
SC
J
STG
CES
GES
D
RRM
ISO
t
Symbol
CE
C
(sat) = 2.2 V @ I
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Short Circuit Withstand Time
Repetitive Peak Reverse Voltage
Average Output Rectified Current
Surge Forward Current
@ 1Cycle at 60Hz, Peak value Non-Repetitive
1 Cycle Surge Current
Operating Junction Temperature
Storage Temperature Range
Isolation Voltage
Mounting part Screw
= 100 C, V
GE
= 15V
T
C
C
= 25 C unless otherwise noted
= 10A
Description
R
S
T
@ T
@ T
@ T
@ T
@ AC 1minute
@ M4
C
C
C
C
= 25 C
= 100 C
= 25 C
= 100 C
N
P
Package Code : 21PM-AA
GB
B
E
Internal Circuit Diagram
P1
FMC7G10US60
EU
-GU
GU
-40 to +150
-40 to +125
1200
2500
± 20
1.25
600
100
10
20
10
20
36
10
10
41
EV
U
-GV
GV
IGBT
October 2001
EW
GW
-GW
V
FMC7G10US60 Rev. A4
Units
N.m
A
us
W
V
V
A
A
A
A
V
A
A
V
2
C
C
s
W

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FMC7G10US60 Summary of contents

Page 1

... Repetitive rating : Pulse width limited by max. junction temperature ©2001 Fairchild Semiconductor Corporation = 15V GE Package Code : 21PM-AA = 10A Internal Circuit Diagram unless otherwise noted C Description @ 100 100 1minute @ M4 October 2001 IGBT -GU -GV -GW FMC7G10US60 Units 600 V ± 1200 100 -40 to +150 C -40 to +125 C 2500 V 1.25 N.m FMC7G10US60 Rev. A4 ...

Page 2

... V = 300 10A 15V Inductive Load 300 10A 15V Inductive Load 125 300 15V 100 300 10A 15V GE -- Typ. Max. Units -- -- V 0 250 uA -- ± 100 nA 6.0 8.5 V 2.2 2.8 V 660 -- pF 115 -- 158 200 0.36 0 242 350 0.61 0. FMC7G10US60 Rev. A4 ...

Page 3

... 100 RRM T = 100 C C Parameter Typ unless otherwise noted C Min. Typ. Max. Units -- 1 130 ns -- 110 -- -- 0.7 1 unless otherwise noted Min. Typ. Max. Units -- 1 Max. Units 3.47 C/W 4.0 C/W 3.47 C/W 4.0 C/W 3.6 C FMC7G10US60 Rev. A4 ...

Page 4

... C Power Dissipation = 18W 0 100 150 0.1 [ ℃ Fig 4. Load Current vs. Frequency 20 Common Emitter T = 125℃ [V] GE Fig 6. Saturation Voltage vs Collector - Emitter Voltage 300V CC Load Current : peak of square wave 1 10 100 1000 Frequency [KHz] 20A 10A Gate - Emitter Voltage FMC7G10US60 Rev. A4 ...

Page 5

... T C Ton Toff Tr Tf Toff Tf 100 [A] C Fig 12. Turn-Off Characteristics vs. Collector Current = ± 15V = 300V Ton Tr 10 100 Gate Resistance ± 15V = 300V Eoff Eon Eoff 10 100 Gate Resistance ± 15V 25℃ ━━ = 125℃ ------ Collector Current, I [A] C FMC7G10US60 Rev ...

Page 6

... Fig 16. Turn-Off SOA Characteristics 10 1 0.1 0.01 500 600 700 -5 10 [V] CE Fig 18. Transient Thermal Impedance = 30 = 25℃ 300 100 V CC 200 Gate Charge Safe Operating Area V = 20V 100℃ 100 1000 Collector-Emitter Voltage, V [V] CE IGBT : DIODE : - Rectangular Pulse Duration [sec] FMC7G10US60 Rev ...

Page 7

... Common Cathode 25℃ 125℃ Forward Voltage, V Fig 19. Forward Characteristics ©2001 Fairchild Semiconductor Corporation 0 [V] F Fig 20. Reverse Recovery Characteristics Common Cathode di/dt = 20A/㎲ 25℃ 100℃ Forward Current, I [A] F FMC7G10US60 Rev. A4 ...

Page 8

... Package Dimension 21PM-AA (FS PKG CODE BJ) ©2001 Fairchild Semiconductor Corporation Dimensions in Millimeters FMC7G10US60 Rev. A4 ...

Page 9

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DenseTrench™ GTO™ ...

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