FMC7G10US60 Fairchild Semiconductor, FMC7G10US60 Datasheet - Page 7

• Manufacturer Part Number: FMC7G10US60
• Description: IGBT Modules
• Manufacturer: Fairchild Semiconductor

Specifications of FMC7G10US60

• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 2.2 V
• Continuous Collector Current At 25 C: 10 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 36 W
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: PM-AA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
Fig 19. Forward Characteristics
40
35
30
25
20
15
10
5
0
0
Common Cathode
V
T
T
GE
C
C
= 25℃
= 125℃
= 0V
1
Forward Voltage, V
2
F
[V]
3
4
Fig 20. Reverse Recovery Characteristics
0.1
20
10
1
2
4
Forward Current, I
6
8
F
Common Cathode
di/dt = 20A/㎲
T
T
[A]
C
C
= 25℃
= 100℃
10
I
rr
T
FMC7G10US60 Rev. A4
rr
12