FMC7G10US60 Fairchild Semiconductor, FMC7G10US60 Datasheet - Page 4

• Manufacturer Part Number: FMC7G10US60
• Description: IGBT Modules
• Manufacturer: Fairchild Semiconductor

Specifications of FMC7G10US60

• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 2.2 V
• Continuous Collector Current At 25 C: 10 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 36 W
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: PM-AA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
Fig 5. Saturation Voltage vs. V
Fig 1. Typical Output Characteristics
Fig 3. Saturation Voltage vs. Case
4.0
3.5
3.0
2.5
2.0
1.5
1.0
40
35
30
25
20
15
10
20
16
12
5
0
8
4
0
-50
0
0
Common Emitter
T
Common Emitter
V
Common Emitter
T
C
GE
Temperature at Variant Current Level
C
= 25℃
= 25℃
= 15V
Collector - Emitter Voltage, V
4
Gate - Emitter Voltage, V
2
0
Case Temperature, T
I
C
= 5A
8
20V
50
4
10A
15V
20A
12
C
[ ℃ ]
GE
GE
CE
100
[V]
6
[V]
16
V
GE
= 10V
I
C
20A
10A
= 5A
12V
150
20
8
Fig 2. Typical Saturation Voltage
Fig 4. Load Current vs. Frequency
Fig 6. Saturation Voltage vs. V
30
25
20
15
10
20
16
12
16
14
12
10
5
0
8
6
4
2
0
8
4
0
0.1
0
Duty cycle : 50%
T
Power Dissipation = 18W
Common Emitter
V
T
T
C
Common Emitter
T
C
C
GE
Characteristics
= 100℃
C
= 25℃ ━━
= 125℃ ------
= 15V
= 125℃
Collector - Emitter Voltage, V
4
Gate - Emitter Voltage, V
1
I
1
C
= 5A
Frequency [KHz]
8
V
Load Current : peak of square wave
CC
= 300V
10
10A
12
20A
GE
GE
100
CE
[V]
[V]
16
10
FMC7G10US60 Rev. A4
1000
20