SKB06N60 Infineon Technologies, SKB06N60 Datasheet - Page 8

• Manufacturer Part Number: SKB06N60
• Description: IGBT Transistors FAST IGBT NPT TECH 600V 6A
• Manufacturer: Infineon Technologies

Specifications of SKB06N60

• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Package / Case: TO-220-3
• Continuous Collector Current Ic Max: 12 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: D2PAK (TO-263)
• Vce (max): 600.0 V
• Ic(max) @ 25°: 12.0 A
• Ic(max) @ 100°: 6.9 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SKB06N60XT

Figure 18. Short circuit withstand time as a
function of gate-emitter voltage
(V
25 s
20 s
15 s
10 s
25V
20V
15V
10V
5 s
0 s
CE
5V
0V
10V
Figure 16. Typical gate charge
(I
0nC
C
= 600V, start at T
= 6A)
V
GE
11V
,
Q
GATE
GE
15nC
,
GATE CHARGE
-
12V
EMITTER VOLTAGE
120V
j
= 25 C)
13V
30nC
14V
480V
45nC
15V
8
Figure 19. Typical short circuit collector
current as a function of gate-emitter voltage
(V
100pF
CE
100A
10pF
1nF
80A
60A
40A
20A
Figure 17. Typical capacitance as a
function of collector-emitter voltage
(V
0A
10V
GE
0V
600V, T
V
CE
= 0V, f = 1MHz)
V
,
GE
COLLECTOR
12V
,
j
GATE
= 150 C)
10V
14V
-
EMITTER VOLTAGE
-
EMITTER VOLTAGE
20V
SKB06N60
16V
Rev. 2.2
18V
30V
C
C
C
iss
oss
rss
Oct. 07
20V