SKB06N60 Infineon Technologies, SKB06N60 Datasheet - Page 9

• Manufacturer Part Number: SKB06N60
• Description: IGBT Transistors FAST IGBT NPT TECH 600V 6A
• Manufacturer: Infineon Technologies

Specifications of SKB06N60

• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Package / Case: TO-220-3
• Continuous Collector Current Ic Max: 12 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: D2PAK (TO-263)
• Vce (max): 600.0 V
• Ic(max) @ 25°: 12.0 A
• Ic(max) @ 100°: 6.9 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SKB06N60XT

Figure 20. Typical reverse recovery time as
a function of diode current slope
(V
Dynamic test circuit in Figure E)
Figure 22. Typical reverse recovery current
as a function of diode current slope
(V
Dynamic test circuit in Figure E)
500ns
400ns
300ns
200ns
100ns
12A
10A
R
R
0ns
8A
6A
4A
2A
0A
= 200V, T
50A/ s 150A/ s 250A/ s 350A/ s 450A/ s 550A/ s
= 200V, T
50A/ s 150A/ s 250A/ s 350A/ s 450A/ s 550A/ s
d i
d i
F
F
I
F
/ d t,
/ d t,
= 6A
j
j
= 125 C,
= 125 C,
DIODE CURRENT SLOPE
DIODE CURRENT SLOPE
I
F
= 3A
I
F
I
= 12A
F
= 3A
I
F
= 12A
I
F
= 6A
9
600A/ s
500A/ s
400A/ s
300A/ s
200A/ s
100A/ s
1000nC
Figure 21. Typical reverse recovery charge
as a function of diode current slope
(V
Dynamic test circuit in Figure E)
Figure 23. Typical diode peak rate of fall of
reverse recovery current as a function of
diode current slope
(V
Dynamic test circuit in Figure E)
800nC
600nC
400nC
200nC
0A/ s
R
R
0nC
= 200V, T
= 200V, T
50A/ s
50A/ s 150A/ s 250A/ s 350A/ s 450A/ s 550A/ s
d i
di
F
F
/ d t,
150A/ s 250A/ s 350A/ s 450A/ s 550A/ s
/dt,
j
j
= 125 C,
= 125 C,
DIODE CURRENT SLOPE
DIODE CURRENT SLOPE
I
F
= 12A
I
F
= 6A
SKB06N60
Rev. 2.2
I
F
= 3A
Oct. 07