IGP30N60T Infineon Technologies, IGP30N60T Datasheet - Page 5

• Manufacturer Part Number: IGP30N60T
• Description: IGBT Transistors LOW LOSS IGBT TECH 600V 30A
• Manufacturer: Infineon Technologies

Specifications of IGP30N60T

• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-220AB-3
• Continuous Collector Current Ic Max: 60 A
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: TO-220
• Vce (max): 600.0 V
• Ic(max) @ 25°: 60.0 A
• Ic(max) @ 100°: 30.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
Figure 5. Typical output characteristic
5 0 A
4 0 A
3 0 A
2 0 A
1 0 A
Figure 7. Typical transfer characteristic
80A
70A
60A
50A
40A
30A
20A
10A
0 A
0A
0 V
0V
V
V
G E
CE
=20V
11V
13V
15V
V
,
(T
(V
9V
7V
COLLECTOR
GE
2 V
j
CE
= 25°C)
,
GATE-EMITTER VOLTAGE
=20V)
T
1V
J
= 1 7 5 °C
2 5 °C
4 V
-
EMITTER VOLTAGE
2V
6 V
8 V
3V
5
TrenchStop Series
Figure 6. Typical output characteristic
Figure 8. Typical collector-emitter
50A
40A
30A
20A
10A
2.5V
2.0V
1.5V
1.0V
0.5V
0.0V
0A
0V
0°C
®
V
G E
V
CE
=20V
11V
13V
15V
(T
saturation voltage as a function of
junction temperature
(V
T
,
7V
9V
COLLECTOR
J
j
GE
,
= 175°C)
JUNCTION TEMPERATURE
1V
= 15V)
50°C
-
IGW30N60T
EMITTER VOLTAGE
IGP30N60T
2V
100°C
Rev. 2.6 Nov. 09
3V
I
I
I
C
150°C
C
C
=30A
=15A
=60A