IGP30N60T Infineon Technologies, IGP30N60T Datasheet - Page 9

• Manufacturer Part Number: IGP30N60T
• Description: IGBT Transistors LOW LOSS IGBT TECH 600V 30A
• Manufacturer: Infineon Technologies

Specifications of IGP30N60T

• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-220AB-3
• Continuous Collector Current Ic Max: 60 A
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: TO-220
• Vce (max): 600.0 V
• Ic(max) @ 25°: 60.0 A
• Ic(max) @ 100°: 30.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
10
10
Figure 21. IGBT transient thermal resistance
-1
-2
K/W
K/W
1µs
D=0.5
0.05
0.1
0.2
(D = t
10µs 100µs 1ms
t
p
single pulse
P
,
/ T)
0.01
PULSE WIDTH
0.02
R
0.29566
0.25779
0.19382
0.05279
R , ( K / W )
1
C
1
=
1
/ R
10ms 100ms
1
C
6.478*10
6.12*10
4.679*10
6.45*10
2
=
, ( s )
2
/ R
R
2
-3
-5
2
-2
-4
9
TrenchStop Series
®
IGW30N60T
IGP30N60T
Rev. 2.6 Nov. 09