IDP04E120 Infineon Technologies, IDP04E120 Datasheet - Page 5

• Manufacturer Part Number: IDP04E120
• Description: DIODE 1200V 11.2A TO220-2
• Manufacturer: Infineon Technologies

Specifications of IDP04E120

• Package / Case: TO-220-2
• Voltage - Forward (vf) (max) @ If: 2.15V @ 4A
• Voltage - Dc Reverse (vr) (max): 1200V (1.2kV)
• Current - Average Rectified (io): 11.2A (DC)
• Current - Reverse Leakage @ Vr: 100µA @ 1200V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 115ns
• Mounting Type: Through Hole
• Product: Switching Diodes
• Peak Reverse Voltage: 1200 V
• Forward Continuous Current: 11.2 A
• Max Surge Current: 28 A
• Configuration: Single
• Recovery Time: 115 ns
• Forward Voltage Drop: 2.15 V
• Maximum Reverse Leakage Current: 100 uA
• Operating Temperature Range: - 55 C to + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Packages: PG-TO220-2
• If (typ): 4.0 A
• If (max): 11.2 A
• If,sm (max): 28.0 A
• Vf (typ): 1.65 V
• Ir (max): 100.0 µA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Rev.2.2
5 Typ. reverse recovery time
t
parameter: V
7 Typ. reverse recovery current
I
parameter: V
rr
rr
= f (di
= f (di
ns
A
500
400
350
300
250
200
150
100
50
12
10
0
200
9
8
7
6
5
4
200
F
F
/dt)
/dt)
300
300
8A
4A
2A
R
R
400
400
= 800V, T
= 800V, T
500
500
600
600
j
j
= 125°C
= 125°C
700
700
800
800
8A
4A
2A
A/µs
A/µs
di
di
F
F
1000
1000
/dt
/dt
Page 5
6 Typ. reverse recovery charge
Q
parameter: V
8 Typ. reverse recovery softness factor
S = f(di
parameter: V
rr
nC
=f(di
900
800
750
700
650
600
550
500
450
400
20
16
14
12
10
200
8
6
4
2
0
200
F
F
/dt)
/dt)
300
300
R
R
400
400
= 800V, T
= 800V, T
500
500
600
600
j
j
8A
4A
2A
= 125 °C
= 125°C
700
700
8A
4A
2A
IDP04E120
2007-04-24
800
800
A/µs
A/µs
di
di
F
F
1000
1000
/dt
/dt