IDP04E120 Infineon Technologies, IDP04E120 Datasheet - Page 6

• Manufacturer Part Number: IDP04E120
• Description: DIODE 1200V 11.2A TO220-2
• Manufacturer: Infineon Technologies

Specifications of IDP04E120

• Package / Case: TO-220-2
• Voltage - Forward (vf) (max) @ If: 2.15V @ 4A
• Voltage - Dc Reverse (vr) (max): 1200V (1.2kV)
• Current - Average Rectified (io): 11.2A (DC)
• Current - Reverse Leakage @ Vr: 100µA @ 1200V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 115ns
• Mounting Type: Through Hole
• Product: Switching Diodes
• Peak Reverse Voltage: 1200 V
• Forward Continuous Current: 11.2 A
• Max Surge Current: 28 A
• Configuration: Single
• Recovery Time: 115 ns
• Forward Voltage Drop: 2.15 V
• Maximum Reverse Leakage Current: 100 uA
• Operating Temperature Range: - 55 C to + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Packages: PG-TO220-2
• If (typ): 4.0 A
• If (max): 11.2 A
• If,sm (max): 28.0 A
• Vf (typ): 1.65 V
• Ir (max): 100.0 µA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

9 Max. transient thermal impedance
Z
parameter : D = t
Rev.2.2
thJC
K/W
10
10
10
10
10
10
-1
-2
-3
-4
= f (t
1
0
10
IDP04E120
-7
p
10
single pulse
)
-6
10
p
-5
/T
10
-4
10
-3
10
-2
D = 0.50
0.20
0.10
0.05
0.02
0.01
t
s
p
10
0
Page 6
IDP04E120
2007-04-24