IDD03SG60C Infineon Technologies, IDD03SG60C Datasheet - Page 2

• Manufacturer Part Number: IDD03SG60C
• Description: DIODE SCHOTTKY 600V 3A TO252-3
• Manufacturer: Infineon Technologies
• Series: thinQ!™r

Specifications of IDD03SG60C

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Voltage - Forward (vf) (max) @ If: 2.3V @ 3A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 3A (DC)
• Current - Reverse Leakage @ Vr: 15µA @ 600V
• Diode Type: Silicon Carbide Schottky
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Capacitance @ Vr, F: 60pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Product: Schottky Diodes
• Peak Reverse Voltage: 600 V
• Forward Continuous Current: 3 A
• Max Surge Current: 11.5 A
• Configuration: Single
• Forward Voltage Drop: 2.3 V
• Maximum Reverse Leakage Current: 15 uA
• Maximum Power Dissipation: 38 W
• Operating Temperature Range: - 55 C to + 175 C
• Mounting Style: SMD/SMT
• Technology: thinQ!™ 3G
• V: 600.0 V
• If (typ): 3.0 A
• Qc (typ): 3.2 nC
• Package: DPAK (TO-252)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: IDD03SG60C; IDD03SG60CTR; SP000411542; SP000786802

Rev. 2.0
1)
2)
3)
di/dt), different from t
absence of minority carrier injection.
4)
5)
connection. PCB is vertical without blown air
6)
Parameter
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient
Electrical characteristics, at T
Static characteristics
DC blocking voltage
Diode forward voltage
Reverse current
AC characteristics
Total capacitive charge
Switching time
Total capacitance
J-STD20 and JESD22
All devices tested under avalanche conditions, for a time periode of 10ms, at 20mA.
Under worst case Z
t
Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm² (one layer, 70µm thick) copper area for drain
Only capacitive charge occuring, guaranteed by design.
c
is the time constant for the capacitive displacement current waveform (independent from T
3)
rr
th
which is dependent on T
conditions.
j
=25 °C, unless otherwise specified
Symbol Conditions
R
R
V
V
I
Q
t
C
R
c
DC
F
thJC
thJA
c
j
, I
SMD version, device
on PCB, minimal
footprint
SMD version, device
on PCB, 6 cm
area
I
I
I
V
V
V
di
T
V
V
V
LOAD
R
F
F
page 2
j
=3 A, T
=3 A, T
R
R
R
R
R
R
=0.05 mA, T
=150 °C
F
=600 V, T
=600 V, T
=400 V,I
=1 V, f =1 MHz
=300 V, f =1 MHz
=600 V, f =1 MHz
/dt =200 A/µs,
5)
and di/dt. No reverse recovery time constant t
j
j
=25 °C
=150 °C
F
≤I
j
j
=25 °C
=150 °C
2
j
F,max
=25 °C
cooling
,
min.
600
-
-
-
-
-
-
-
-
-
-
-
-
Values
0.23
typ.
2.1
2.8
3.2
50
60
1
8
8
-
-
-
-
IDD03SG60C
max.
150
<10
j
3.9
2.3
, I
75
15
-
-
-
-
-
-
-
LOAD
rr
and
due to
Unit
K/W
V
µA
nC
ns
pF
2010-03-19