IDD03SG60C Infineon Technologies, IDD03SG60C Datasheet - Page 5

• Manufacturer Part Number: IDD03SG60C
• Description: DIODE SCHOTTKY 600V 3A TO252-3
• Manufacturer: Infineon Technologies
• Series: thinQ!™r

Specifications of IDD03SG60C

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Voltage - Forward (vf) (max) @ If: 2.3V @ 3A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 3A (DC)
• Current - Reverse Leakage @ Vr: 15µA @ 600V
• Diode Type: Silicon Carbide Schottky
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Capacitance @ Vr, F: 60pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Product: Schottky Diodes
• Peak Reverse Voltage: 600 V
• Forward Continuous Current: 3 A
• Max Surge Current: 11.5 A
• Configuration: Single
• Forward Voltage Drop: 2.3 V
• Maximum Reverse Leakage Current: 15 uA
• Maximum Power Dissipation: 38 W
• Operating Temperature Range: - 55 C to + 175 C
• Mounting Style: SMD/SMT
• Technology: thinQ!™ 3G
• V: 600.0 V
• If (typ): 3.0 A
• Qc (typ): 3.2 nC
• Package: DPAK (TO-252)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: IDD03SG60C; IDD03SG60CTR; SP000411542; SP000786802

Rev. 2.0
9 Typ. C stored energy
E
C
=f(V
1.8
1.5
1.3
1.0
0.8
0.5
0.3
0.0
R
)
0
100
200
V
300
R
[V]
400
500
600
page 5
IDD03SG60C
2010-03-19