IDB10S60C Infineon Technologies, IDB10S60C Datasheet - Page 3

• Manufacturer Part Number: IDB10S60C
• Description: DIODE SCHOTTKY 600V 10A D2PAK
• Manufacturer: Infineon Technologies
• Series: thinQ!™r

Specifications of IDB10S60C

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Voltage - Forward (vf) (max) @ If: 1.7V @ 10A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 10A (DC)
• Current - Reverse Leakage @ Vr: 140µA @ 600V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Capacitance @ Vr, F: 480pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Product: Schottky Diodes
• Peak Reverse Voltage: 600 V
• Forward Continuous Current: 10 A
• Max Surge Current: 76 A
• Forward Voltage Drop: 1.7 V
• Maximum Reverse Leakage Current: 140 uA
• Operating Temperature Range: - 55 C to + 175 C
• Mounting Style: SMD/SMT
• Technology: thinQ!™ 2G
• V: 600.0 V
• If (typ): 10.0 A
• Qc (typ): 24.0 nC
• Package: D2PAK (TO-263)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: SP000411540

Rev. 2.0
1 Power dissipation
P
3 Typ. forward characteristic
I
parameter: T
F
tot
=f(V
=f(T
100
80
60
40
20
30
20
10
F
0
0
); t
C
25
0
)
p
=400 µs
j
50
1
75
-55 °C
100
T
V
25 °C
C
F
2
[°C]
[V]
125
100 °C
150 °C
150
3
175°C
175
200
page 3
4
2 Diode forward current
I
4 Typ. forward characteristic in surge current
mode
I
F
F
=f(T
=f(V
120
100
25
20
15
10
80
60
40
20
C
F
5
0
0
); T
); t
25
0
p
j
=400 µs; parameter: T
≤175 °C
50
2
150 °C
75
100 °C
25 °C
T
V
C
100
F
4
[°C]
[V]
j
125
175°C
-55 °C
6
IDB10S60C
150
2008-03-26
175
8