IDB10S60C Infineon Technologies, IDB10S60C Datasheet - Page 4

• Manufacturer Part Number: IDB10S60C
• Description: DIODE SCHOTTKY 600V 10A D2PAK
• Manufacturer: Infineon Technologies
• Series: thinQ!™r

Specifications of IDB10S60C

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Voltage - Forward (vf) (max) @ If: 1.7V @ 10A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 10A (DC)
• Current - Reverse Leakage @ Vr: 140µA @ 600V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Capacitance @ Vr, F: 480pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Product: Schottky Diodes
• Peak Reverse Voltage: 600 V
• Forward Continuous Current: 10 A
• Max Surge Current: 76 A
• Forward Voltage Drop: 1.7 V
• Maximum Reverse Leakage Current: 140 uA
• Operating Temperature Range: - 55 C to + 175 C
• Mounting Style: SMD/SMT
• Technology: thinQ!™ 2G
• V: 600.0 V
• If (typ): 10.0 A
• Qc (typ): 24.0 nC
• Package: D2PAK (TO-263)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: SP000411540

Rev. 2.0
5 Typ. forward power dissipation vs.
average forward current
P
7 Transient thermal impedance
Z
parameter: D =t
thJC
F,AV
=f(t
10
10
=f(I
10
10
50
40
30
20
10
0
-1
-2
1
0
10
p
0
F
)
), T
-5
0.01
0.02
0.1
0.5
single pulse
0.2
C
=100 °C, parameter: D =t
p
10
/T
5
-4
0.1
0.2
10
10
I
-3
F(AV)
t
P
[s]
[A]
0.5
10
15
-2
1
p
/T
10
20
-1
10
page 4
25
0
6 Typ. reverse current vs. reverse voltage
I
parameter: T
8 Typ. capacitance vs. reverse voltage
C =f(V
R
=f(V
600
500
400
300
200
100
10
10
10
10
10
10
R
R
0
-1
-2
-3
2
1
0
); T
10
)
100
-1
C
=25 °C, f =1 MHz
j
150 °C
200
10
175 °C
25 °C
100 °C
0
300
-55 °C
V
V
10
R
R
[V]
[V]
1
400
10
IDB10S60C
2
500
2008-03-26
10
600
3