SDT04S60 Infineon Technologies, SDT04S60 Datasheet

SCHOTTKY 600V 4A TO220-2-2

SDT04S60

Manufacturer Part Number
SDT04S60
Description
SCHOTTKY 600V 4A TO220-2-2
Manufacturer
Infineon Technologies
Series
thinQ!™r
Datasheet

Specifications of SDT04S60

Package / Case
TO-220-2
Voltage - Forward (vf) (max) @ If
1.9V @ 4A
Voltage - Dc Reverse (vr) (max)
600V
Current - Average Rectified (io)
4A (DC)
Current - Reverse Leakage @ Vr
200µA @ 600V
Diode Type
Silicon Carbide Schottky
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0ns
Capacitance @ Vr, F
150pF @ 0V, 1MHz
Mounting Type
Through Hole
Product
Schottky Diodes
Peak Reverse Voltage
600 V
Forward Continuous Current
4 A
Max Surge Current
12.5 A
Configuration
Single
Forward Voltage Drop
1.9 V
Maximum Reverse Leakage Current
200 uA
Operating Temperature Range
- 55 C to + 175 C
Mounting Style
Through Hole
Technology
thinQ!™
V
600.0 V
If (typ)
4.0 A
Qc (typ)
13.0 nC
Package
TO-220 (decapped middle leg)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SDT04S60IN
SDT04S60X
SDT04S60XK
SDT04S60XTIN
SDT04S60XTIN
SP000013822

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SDT04S60
Manufacturer:
infineon
Quantity:
557
Part Number:
SDT04S60
Manufacturer:
MELEXIS
Quantity:
2 000
Part Number:
SDT04S60
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
Part Number:
SDT04S60
Quantity:
50
Silicon Carbide Schottky Diode
• Worlds first 600V Schottky diode
• Revolutionary semiconductor
• Switching behavior benchmark
• No reverse recovery
• No temperature influence on
• Ideal diode for Power Factor
• No forward recovery
Type
SDP04S60
SDD04S60
SDT04S60
Maximum Ratings, at T
Parameter
Continuous forward current,
RMS forward current,
Surge non repetitive forward current, sine halfwave
T
Repetitive peak forward current
T
Non repetitive peak forward current
t
i
Repetitive peak reverse voltage
Surge peak reverse voltage
Power dissipation,
Operating and storage temperature
Rev. 2.5
p
C
j
2
Correction up to 800W
=10µs, T
=150°C, T
material - Silicon Carbide
the switching behavior
t value,
=25°C, t
C
p
C
=25°C
T
=10ms
C
=100°C, D=0.1
=25°C, t
Package
P-TO220-3
P-TO252-3
PG-TO220-2-2.
T
p
=10ms
C
=25°C
f=50Hz
1)
j
= 25 °C, unless otherwise specified
T
C
=100°C
Ordering Code
Q67040-S4369
Q67040-S4368
Q67040-S4445
PG-TO220-2-2.
Page 1
Symbol
I
I
I
I
I
V
V
P
T
F
FRMS
FSM
FRM
FMAX
i
2
j ,
RRM
RSM
tot
dt
T
Marking
D04S60
D04S60
D04S60
thinQ!
stg
P-TO252
SDP04S60, SDD04S60
Product Summary
V
Q
I
SiC Schottky Diode
F
Pin 1
-55... +175
n.c.
n.c.
RRM
c
C
Value
12.5
0.78
36.5
600
600
5.6
18
40
4
P-TO220
Pin 2
C
A
A
SDT04S60
2008-06-02
600
13
4
Unit
A
A²s
V
W
°C
Pin 3
C
A
V
nC
A

Related parts for SDT04S60

SDT04S60 Summary of contents

Page 1

... SiC Schottky Diode Product Summary V RRM P-TO252 P-TO220 Marking Pin 1 Pin 2 D04S60 n.c. D04S60 n.c. D04S60 C Value 4 F 5.6 FRMS 12.5 FSM 18 FRM 40 FMAX 0. 600 RRM 600 RSM 36.5 tot T -55... +175 j , stg SDT04S60 V 600 Pin Unit A A² °C 2008-06-02 ...

Page 2

... Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev. 2.5 Symbol R thJC R thJA R thJA °C, unless otherwise specified j Symbol =100°C, η = 93%, ∆ 30% C Page 2 SDP04S60, SDD04S60 SDT04S60 Values Unit min. typ. max 4.1 K Values Unit min. ...

Page 3

... Switching time =400V, I =4A /dt=200A/µ Total capacitance =0V, T =25°C, f=1MHz =300V, T =25°C, f=1MHz =600V, T =25°C, f=1MHz Rev. 2 °C, unless otherwise specified j Symbol Q c =150° =150° Page 3 SDP04S60, SDD04S60 SDT04S60 Values Unit min. typ. max n. 150 - - 2008-06-02 ...

Page 4

... Diode forward current = parameter: T °C 180 Typ. forward power dissipation vs. average forward current P F(AV 2 Page 4 SDP04S60, SDD04S60 ) C ≤ 175 °C j 4.5 A 3.5 3 2.5 2 1 100 120 140 =100° SDT04S60 °C 180 T C d=0.1 d=0.2 d=0.5 d F(AV) 2008-06-02 ...

Page 5

... K 25°C 100°C 10 125°C 150° 400 V 600 Typ. C stored energy E =f(V C µ Page 5 SDP04S60, SDD04S60 = SDP04S60 single pulse - 1.6 1.4 1.2 1 0.8 0.6 0.4 0 100 200 300 400 SDT04S60 D = 0.50 0.20 0.10 0.05 0.02 0. 600 V R 2008-06-02 ...

Page 6

... Typ. capacitive charge vs. current slope parameter 150 ° *0 100 200 300 400 500 600 700 800 Rev. 2 A/µs 1000 di /dt F Page 6 SDP04S60, SDD04S60 SDT04S60 2008-06-02 ...

Page 7

... P-TO220-3-1, P-TO220-3-21 Rev. 2.5 SDP04S60, SDD04S60 Page 7 SDT04S60 2008-06-02 ...

Page 8

... P-TO252-3-1, P-TO252-3-11, P-TO252-3-21 (D-Pak) Rev. 2.5 SDP04S60, SDD04S60 Page 7 SDT04S60 2008-06-02 ...

Page 9

... PG-TO-220-2-2 Rev. 2.5 SDP04S60, SDD04S60 Page 8 SDT04S60 2008-06-02 ...

Page 10

... Rev. 2.5 SDP04S60, SDD04S60 Page 9 SDT04S60 2008-06-02 ...

Related keywords