SDT04S60 Infineon Technologies, SDT04S60 Datasheet - Page 3

• Manufacturer Part Number: SDT04S60
• Description: SCHOTTKY 600V 4A TO220-2-2
• Manufacturer: Infineon Technologies
• Series: thinQ!™r

Specifications of SDT04S60

• Package / Case: TO-220-2
• Voltage - Forward (vf) (max) @ If: 1.9V @ 4A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 4A (DC)
• Current - Reverse Leakage @ Vr: 200µA @ 600V
• Diode Type: Silicon Carbide Schottky
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Capacitance @ Vr, F: 150pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Product: Schottky Diodes
• Peak Reverse Voltage: 600 V
• Forward Continuous Current: 4 A
• Max Surge Current: 12.5 A
• Configuration: Single
• Forward Voltage Drop: 1.9 V
• Maximum Reverse Leakage Current: 200 uA
• Operating Temperature Range: - 55 C to + 175 C
• Mounting Style: Through Hole
• Technology: thinQ!™
• V: 600.0 V
• If (typ): 4.0 A
• Qc (typ): 13.0 nC
• Package: TO-220 (decapped middle leg)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SDT04S60IN; SDT04S60X; SDT04S60XK; SDT04S60XTIN; SDT04S60XTIN; SP000013822

Electrical Characteristics, at T
Parameter
AC Characteristics
Total capacitive charge
V
Switching time
V
Total capacitance
V
V
V
Rev. 2.5
R
R
R
R
R
=400V, I
=400V, I
=0V, T
=300V, T
=600V, T
C
=25°C, f=1MHz
F
F
C
C
=4A, di
=4A, di
=25°C, f=1MHz
=25°C, f=1MHz
F
F
/dt=200A/µs, T
/dt=200A/µs, T
j
j
=150°C
=150°C
j
= 25 °C, unless otherwise specified
Page 3
Symbol
Q
t
C
rr
c
min.
SDP04S60, SDD04S60
-
-
-
-
-
Values
150
typ.
n.a.
13
10
7
max.
SDT04S60
2008-06-02
-
-
-
-
-
Unit
nC
ns
pF