SDT10S60 Infineon Technologies, SDT10S60 Datasheet - Page 5

• Manufacturer Part Number: SDT10S60
• Description: DIODE SCHOTTKY 10A 600V TO220-2
• Manufacturer: Infineon Technologies
• Series: thinQ!™r

Specifications of SDT10S60

• Package / Case: TO-220-2
• Voltage - Forward (vf) (max) @ If: 1.7V @ 10A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 10A (DC)
• Current - Reverse Leakage @ Vr: 350µA @ 600V
• Diode Type: Silicon Carbide Schottky
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Capacitance @ Vr, F: 350pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Product: Schottky Diodes
• Peak Reverse Voltage: 600 V
• Forward Continuous Current: 10 A
• Max Surge Current: 31 A
• Configuration: Single
• Forward Voltage Drop: 1.7 V
• Maximum Reverse Leakage Current: 350 uA
• Operating Temperature Range: - 55 C to + 175 C
• Mounting Style: Through Hole
• Technology: thinQ!™
• V: 600.0 V
• If (typ): 10.0 A
• Qc (typ): 29.0 nC
• Package: TO-220 (decapped middle leg)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SDT10S60X; SDT10S60XK; SP000014896

5 Typ. reverse current vs. reverse voltage
7 Typ. capacitance vs. reverse voltage
parameter: T
Rev. 2.2
I
C = f ( V
R
= f ( V
µA
10
10
10
pF
10
10
10
400
320
280
240
200
160
120
80
40
-1
-2
-3
100 150 200 250 300 350 400 450 500
0
2
1
0
10
R
R
)
)
0
150°C
125°C
100°C
25°C
C
= 25 °C, f = 1 MHz
10
1
10
2
V
V
V
V
R
R
600
10
Page 5
3
6 Transient thermal impedance
Z
parameter : D = t
8 Typ. C stored energy
E
thJC
C
K/W
= f ( V
10
10
10
10
10
10
µJ
4.5
3.5
2.5
1.5
0.5
= f ( t
-1
-2
-3
-4
6
5
4
3
2
1
0
1
0
10
0
R
SDT10S60
)
-7
p
10
)
single pulse
100
-6
10
p
200
/ T
-5
10
-4
300
10
-3
400
SDT10S60
SDT10S60
10
2008-06-02
-2
D = 0.50
V
0.20
0.10
0.05
0.02
0.01
t
V
s
p
R
600
10
0