SDT10S60 Infineon Technologies, SDT10S60 Datasheet - Page 8
SDT10S60
Manufacturer Part Number
SDT10S60
Description
DIODE SCHOTTKY 10A 600V TO220-2
Manufacturer
Infineon Technologies
Series
thinQ!™r
Datasheet
1.SDT10S60.pdf
(8 pages)
Specifications of SDT10S60
Package / Case
TO-220-2
Voltage - Forward (vf) (max) @ If
1.7V @ 10A
Voltage - Dc Reverse (vr) (max)
600V
Current - Average Rectified (io)
10A (DC)
Current - Reverse Leakage @ Vr
350µA @ 600V
Diode Type
Silicon Carbide Schottky
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0ns
Capacitance @ Vr, F
350pF @ 0V, 1MHz
Mounting Type
Through Hole
Product
Schottky Diodes
Peak Reverse Voltage
600 V
Forward Continuous Current
10 A
Max Surge Current
31 A
Configuration
Single
Forward Voltage Drop
1.7 V
Maximum Reverse Leakage Current
350 uA
Operating Temperature Range
- 55 C to + 175 C
Mounting Style
Through Hole
Technology
thinQ!
V
600.0 V
If (typ)
10.0 A
Qc (typ)
29.0 nC
Package
TO-220 (decapped middle leg)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SDT10S60X
SDT10S60XK
SP000014896
SDT10S60XK
SP000014896
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
SDT10S60
SDT10S60
2008-06-02
Rev. 2.2
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