FGH40N60UFTU Fairchild Semiconductor, FGH40N60UFTU Datasheet - Page 3

• Manufacturer Part Number: FGH40N60UFTU
• Description: IGBT FIELD STOP 600V 80A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of FGH40N60UFTU

• Igbt Type: Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 40A
• Current - Collector (ic) (max): 80A
• Power - Max: 290W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 80 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGH40N60UF Rev. B
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 3. Typical Saturation Voltage
Figure 5. Saturation Voltage vs. Case
120
100
120
100
80
60
40
20
80
60
40
20
3.5
3.0
2.5
2.0
1.5
1.0
0
0
0.0
0
25
T
Common Emitter
V
T
T
C
Characteristics
Temperature at Variant Current Level
Common Emitter
V
C
C
GE
Collector-EmitterCase Temperature, T
GE
= 25
= 25
= 125
= 15V
= 15V
o
Collector-Emitter Voltage, V
Collector-Emitter Voltage, V
o
C
C
o
C
1.5
1
50
20V
3.0
2
75
15V
I
C
= 20A
80A
40A
V
12V
GE
10V
4.5
100
CE
CE
3
= 8V
[V]
[V]
C
[
o
C
]
6.0
125
4
3
Figure 2. Typical Output Characteristics
Figure 4. Transfer Characteristics
Figure 6. Saturation Voltage vs. V
120
100
120
100
20
16
12
80
60
40
20
80
60
40
20
8
4
0
0
0
0.0
4
5
T
Common Emitter
V
T
T
C
CE
C
C
= 125
= 25
= 125
= 20V
6
Collector-Emitter Voltage, V
o
o
C
o
I
Gate-Emitter Voltage, V
C
C
C
1.5
Gate-Emitter Voltage,V
8
= 20A
7
8
40A
20V
12
3.0
80A
9
Common Emitter
T
15V
C
V
GE
= - 40
GE
GE
10
12V
16
4.5
10V
[V]
CE
[V]
= 8V
o
[V]
C
11
GE
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20
6.0
12